A.S. Oates

Hot-carrier-induced circuit degradation for 0.18 /spl mu/m CMOS technology

Yuan Chen, Qiang Li, Wei Li, 2001, Proceedings of the IEEE 2001. 2nd International Symposium on Quality Electronic Design.

An Innovative Understanding of Metal–Insulator–Metal (MIM)-Capacitor Degradation Under Constant-Current Stress

You-Wen Yau, Horng-Chih Lin, A.S. Oates, 2007, IEEE Transactions on Device and Materials Reliability.

Time Dependent Vccmin Degradation of SRAM Fabricated with High-k Gate Dielectrics

C.H. Yu, A.S. Oates, J.C. Lin, 2007, 2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual.

Analysis and modeling of critical current density effects on electromigration failure distributions of Cu dual-damascene vias

A.S. Oates, M.H. Lin, 2008, 2008 IEEE International Reliability Physics Symposium.

Electromigration Failure Distributions of Cu/Low-$k$ Dual-Damascene Vias: Impact of the Critical Current Density and a New Reliability Extrapolation Methodology

A.S. Oates, M.H. Lin, M. H. Lin, 2009, IEEE Transactions on Device and Materials Reliability.

Reliability of HfSiON as gate dielectric for advanced CMOS technology

Min-Hwa Chi, Mong-Song Liang, C.H. Diaz, 2005, Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005..