P. Moszczyński
发表
A. Rogalski,
S. Krishna,
A. Kolek,
2015
.
The method for calculation of carrier concentration in narrow-gap n-type doped Hg1−xCdxTe structures
M. Suligowski,
M. Nietopiel,
A. Jóźwikowska,
2017,
Optical and Quantum Electronics.
The method for calculation of carrier concentration in narrow-gap n-type doped Hg1−xCdxTe structures
M. Suligowski,
M. Nietopiel,
A. Jóźwikowska,
2016,
2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD).
A. Walczak,
Paweł Moszczyński,
P. Marciniak,
2016
.
A. Walczak,
Paweł Moszczyński,
P. Moszczyński,
2018
.