Y.I. Nissim

Dry etch recess of an InGaAs/InAlAs/InP HEMT like structure using a low energy high density SiCl/sub 4/ plasma (ICP)

H. Maher, J. Decobert, J. Etrillard, 1998, Conference Proceedings. 1998 International Conference on Indium Phosphide and Related Materials (Cat. No.98CH36129).

Passivation of InGaAs surfaces with an integrated process including an ammonia DECR plasma

Y.I. Nissim, B. Lescaut, J.F. Bresse, 1996, Proceedings of 8th International Conference on Indium Phosphide and Related Materials.