P. Nguyen

Ultrathin (5 nm) SiGe-On-Insulator with high compressive strain (−2 GPa): From fabrication (Ge enrichment process) to in-depth characterizations

W. Schwarzenbach, O. Bonnin, J. Hartmann, 2014 .

Functionally Graded Interfaces: Role and Origin of Internal Electric Field and Modulated Electrical Response.

S. Priya, M. Hudait, M. Kang, 2015, ACS applied materials & interfaces.

Investigating FinFET Sidewall Passivation Using Epitaxial (100)Ge and (110)Ge Metal–Oxide–Semiconductor Devices on AlAs/GaAs

M. Hudait, M. Clavel, Jheng-Sin Liu, 2017, IEEE Transactions on Electron Devices.

Growth, structural, and electrical properties of germanium-on-silicon heterostructure by molecular beam epitaxy

M. Hudait, R. Bodnar, M. Clavel, 2017 .

Heteroepitaxial Ge on Si via High-Bandgap III-V Buffers for Low-Power Electronic Applications

P. Nguyen, 2016 .

Heteroepitaxial Ge MOS Devices on Si Using Composite AlAs/GaAs Buffer

M. Hudait, N. Allen, L. Guido, 2015, IEEE Journal of the Electron Devices Society.