E. Baylac

Ultrathin (5 nm) SiGe-On-Insulator with high compressive strain (−2 GPa): From fabrication (Ge enrichment process) to in-depth characterizations

W. Schwarzenbach, O. Bonnin, J. Hartmann, 2014 .

14nm FDSOI technology for high speed and energy efficient applications

J. Mazurier, O. Faynot, A. Pofelski, 2014, 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers.