T. Ono

Process integration technology and device characteristics of CMOS FinFET on bulk silicon substrate with sub-10 nm fin width and 20 nm gate length

K. Yahashi, H. Ishiuchi, N. Aoki, 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

High-performance scaled flash-type EEPROMs with heavily oxynitrided tunnel oxide films

T. Hayashi, H. Fukuda, T. Iwabuchi, 1992, 1992 International Technical Digest on Electron Devices Meeting.