G. E. Zardas

发表

A study of electron transition in the energy gap of SI-GaAs with photoconductivity spectra and under alpha-particle irradiation

P. H. Yannakopoulos, Marián Veselý, G. E. Zardas, 2008, Microelectron. J..

Temperature dependence of Si-GaAs energy gap using photoconductivity spectra

P. H. Yannakopoulos, Marián Veselý, G. E. Zardas, 2006, Microelectron. J..

Dependence of GaAs: Si persistent photoconductivity on temperature and alpha-particle irradiation

P. H. Yannakopoulos, G. E. Zardas, Chrys I. Symeonides, 2005, Microelectron. J..

On the case of the negative activation volumes of defects in solids

G. E. Zardas, C. Symeonides, 2009 .

Non-linear composition dependence of the conductivity parameters in alkali halides mixed crystals

G. E. Zardas, 2009 .

The relation between relaxed enthalpy and volume during physical aging

G. E. Zardas, V. Katsika‐Tsigourakou, 2010 .

ERRATUM: TEMPERATURE DEPENDENT MONOVACANCY PARAMETERS VERSUS DIVACANCIES IN ANALYZING DATA OF DEFECTS IN METALS

G. E. Zardas, C. Symeonides, 2009 .

On the Impurity Photoconductivity of Semi-Insulating GaP:Cr

G. E. Zardas, G. Papaioannou, E. Anagnostakis, 1989 .

Persistent photoconductivity in semiconducting III–V compounds

G. E. Zardas, V. S. Vavilov, P. Euthymiou, 1999 .

Room temperature persistent photoconductivity in GaP:S

G. E. Zardas, F. Riesz, P. Euthymiou, 1998 .

Electron irradiation induced defects in undoped and Te doped gallium phosphide

G. E. Zardas, G. Papaioannou, M. Veselý, 2008 .

Determination of the scattering mechanisms in p-type semiconductors of the III–V group: The case of Zn-doped GaP and natural (undoped) GaSb

G. E. Zardas, G. Papaioannou, P. Euthymiou, 1988 .