M. L. Alles

发表

Study of relevance of the SIMOX defect type on yield of radiation-tolerant device test structures

M. J. Anc, L. P. Allen, M. L. Alles, 2001, 2001 IEEE International SOI Conference. Proceedings (Cat. No.01CH37207).

Analysis of thin film SOI material defect requirements for advanced circuit applications [DRAMs]

M. L. Alles, S. R. Wilson, H. J. Hovel, 1997, 1997 IEEE International SOI Conference Proceedings.

Development of a resistive memory-based, radiation-hardened cache memory for space flight and mission-critical applications

Dimitri Linten, Robert A. Reed, Nicholas C. Hooten, 2014 .

Thin film SOI emerges

M. L. Alles, 1997 .

SEU error rates in advanced digital CMOS

Lloyd W. Massengill, M. L. Alles, S. E. Kerns, 1993, RADECS 93. Second European Conference on Radiation and its Effects on Components and Systems (Cat. No.93TH0616-3).

PART III OF THREE PARTS

John D. Cressler, M. L. Alles, Ronald D. Schrimpf, 2008 .

Medium-dose SIMOX quality improvement for advanced CMOS applications

M. L. Alles, R. P. Dolan, B. F. Cordts, 2000, 2000 IEEE International SOI Conference. Proceedings (Cat. No.00CH37125).

Body tie placement in CMOS/SOI digital circuits for transient radiation environments

Lloyd W. Massengill, M. L. Alles, S. E. Kerns, 1991 .

Radiation effects in new materials for nano-devices

M. L. Alles, Ronald D. Schrimpf, Daniel M. Fleetwood, 2011 .

Design and evaluation of SOI devices for radiation environments

D. R. Ball, M. L. Alles, R. D. Schrimpf, 2010, 2010 IEEE International SOI Conference (SOI).

Radiation Effects in Advanced Multiple Gate and Silicon-on-Insulator Transistors

M. L. Alles, E. Simoen, C. Claeys, 2013, IEEE Transactions on Nuclear Science.

Irradiation and Temperature Effects for a 32 nm RF Silicon-on-Insulator CMOS Process

J. S. Kauppila, T. D. Haeffner, A. L. Sternberg, 2014, IEEE Transactions on Nuclear Science.

Total-ionizing-dose radiation response of 32 nm partially and 45 nm fully-depleted SOI devices

D. R. Ball, T. D. Loveless, M. L. Alles, 2012, 2012 IEEE International SOI Conference (SOI).

Sensitivity of High-Frequency RF Circuits to Total Ionizing Dose Degradation

J. S. Kauppila, T. D. Haeffner, L. W. Massengill, 2013, IEEE Transactions on Nuclear Science.

The Impact of Charge Collection Volume and Parasitic Capacitance on SEUs in SOI- and Bulk-FinFET D Flip-Flops

J. S. Kauppila, D. R. Ball, J. A. Maharrey, 2018, IEEE Transactions on Nuclear Science.

Utilizing device stacking for area efficient hardened SOI flip-flop designs

J. S. Kauppila, J. A. Maharrey, L. W. Massengill, 2014, 2014 IEEE International Reliability Physics Symposium.

Single-Event Upset Characterization Across Temperature and Supply Voltage for a 20-nm Bulk Planar CMOS Technology

J. S. Kauppila, T. D. Haeffner, L. W. Massengill, 2015, IEEE Transactions on Nuclear Science.

Electrical Stress and Total Ionizing Dose Effects on Graphene-Based Non-Volatile Memory Devices

En Xia Zhang, M. L. Alles, R. D. Schrimpf, 2012, IEEE Transactions on Nuclear Science.

Analysis of TID Process, Geometry, and Bias Condition Dependence in 14-nm FinFETs and Implications for RF and SRAM Performance

J. S. Kauppila, D. R. Ball, T. D. Haeffner, 2017, IEEE Transactions on Nuclear Science.

Dynamic modeling of radiation induced state change in HfO2/Hf 1T1R RRAM

Dimitri Linten, Nicholas C. Hooten, En Xia Zhang, 2014 .

Estimating Terrestrial Neutron-Induced SEB Cross Sections and FIT Rates for High-Voltage SiC Power MOSFETs

D. R. Ball, A. L. Sternberg, M. L. Alles, 2019, IEEE Transactions on Nuclear Science.

Low-Energy X-ray and Ozone-Exposure Induced Defect Formation in Graphene Materials and Devices

Bin Wang, En Xia Zhang, M. L. Alles, 2011, IEEE Transactions on Nuclear Science.

Radiation hardness of FDSOI and FinFET technologies

J. S. Kauppila, D. R. Ball, L. W. Massengill, 2011, IEEE 2011 International SOI Conference.

Heavy-Ion-Induced Current Transients in Bulk and SOI FinFETs

D. R. Ball, M. L. Alles, E. Simoen, 2012, IEEE Transactions on Nuclear Science.

On-Chip Measurement of Single-Event Transients in a 45 nm Silicon-on-Insulator Technology

J. S. Kauppila, D. R. Ball, T. D. Haeffner, 2012, IEEE Transactions on Nuclear Science.

Geometry Dependence of Total-Dose Effects in Bulk FinFETs

D. R. Ball, B. L. Bhuva, N. N. Mahatme, 2014, IEEE Transactions on Nuclear Science.

Effects of process parameter distributions and ion strike locations on SEU cross-section data (CMOS SRAMs)

Lloyd W. Massengill, M. L. Alles, S. E. Kerns, 1993 .

Recent radiation issues in silicon-on-insulator devices

M. L. Alles, Bongim Jun, Ronald D. Schrimpf, 2005 .