Weitao Cheng

发表

High Performance and Highly Reliable Novel CMOS Devices Using Accumulation Mode Fully Depleted SOI MOSFETs

Tadahiro Ohmi, Rihito Kuroda, Akinobu Teramoto, 2006 .

Performance Boost Using a New Device Structure Design for SOI MOSFETs Beyond 25nm Node

Tadahiro Ohmi, Akinobu Teramoto, Weitao Cheng, 2007 .

Characterization of MOSFETs intrinsic performance using in-wafer advanced Kelvin-contact device structure for high performance CMOS LSIs

S. Sugawa, S. Watabe, T. Komuro, 2008, 2008 IEEE International Conference on Microelectronic Test Structures.

High performance accumulation mode FD-SOI MOSFETs on Si(110) and (110) surfaces (シリコン材料・デバイス)

Rihito Kuroda, Akinobu Teramoto, Tadahiro Ohmi, 2007 .

Experimental demonstration and analysis of high performance and low 1/f noise Tri-gate MOSFETs by optimizing device structure

Tadahiro Ohmi, Akinobu Teramoto, Weitao Cheng, 2009 .

A Study on Very High Performance Novel Balanced Fully Depleted Silicon-on-Insulator Complementary Metal–Oxide–Semiconductor Field-Effect Transistors on Si(110) Using Accumulation-Mode Device Structure for Radio-Frequency Analog Circuits

Tadahiro Ohmi, Rihito Kuroda, Shigetoshi Sugawa, 2009 .

Different mechanism to explain the 1∕f noise in n- and p-SOI-MOS transistors fabricated on (110) and (100) silicon-oriented wafers

Tadahiro Ohmi, Akinobu Teramoto, Weitao Cheng, 2009 .

High performance and highly reliable novel CMOS devices using accumulation mode multi-gate and fully depleted SOI MOSFETs

Tadahiro Ohmi, Rihito Kuroda, Akinobu Teramoto, 2007 .

Hot Carrier Instability Mechanism in Accumulation-Mode Normally-off SOI nMOSFETs and Their Reliability Advantage

Tadahiro Ohmi, Rihito Kuroda, Shigetoshi Sugawa, 2007 .

Relation Between the Mobility, $\hbox{1}/f$ Noise, and Channel Direction in MOSFETs Fabricated on (100) and (110) Silicon-Oriented Wafers

Tadahiro Ohmi, Akinobu Teramoto, Weitao Cheng, 2010, IEEE Transactions on Electron Devices.

Impact of Improved High-Performance Si(110)-Oriented Metal–Oxide–Semiconductor Field-Effect Transistors Using Accumulation-Mode Fully Depleted Silicon-on-Insulator Devices

Tadahiro Ohmi, Shigetoshi Sugawa, Akinobu Teramoto, 2006 .