Philippe Gaubert

High Performance and Highly Reliable Novel CMOS Devices Using Accumulation Mode Fully Depleted SOI MOSFETs

Tadahiro Ohmi, Rihito Kuroda, Akinobu Teramoto, 2006 .

New Processes and Technologies to Reduce the Low‐Frequency Noise of Digital and Analog Circuits

Akinobu Teramoto, Philippe Gaubert, 2016 .

Suppression of the low frequency noise level in (100) and (110) oriented silicon p-MOSFETs induced by an alkali-free cleaning process

Masashi Yamamoto, Tadahiro Ohmi, Akinobu Teramoto, 2005 .

Fastening device between elements of a shed-forming device, process for its manufacture and attachment method using such a device

Philippe Gaubert, Michael Himmelstoss, Patrice Przytarski, 2005 .

Influence of Si Surface Roughness on Electrical Characteristics of MOSFET with HfON Gate Insulator Formed by ECR Plasma Sputtering

Tadahiro Ohmi, Shun'ichiro Ohmi, Dae-Hee Han, 2014, IEICE Trans. Electron..

The role of the temperature on the scattering mechanisms limiting the electron mobility in metal-oxide-semiconductor field-effect-transistors fabricated on (110) silicon-oriented wafers

Tadahiro Ohmi, Akinobu Teramoto, Shigetoshi Sugawa, 2012, 2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC).