Osbert Cheng

Investigation of Low-Frequency Noise in High-k First/Metal Gate Last HfO 2 and ZrO 2 nMOSFETs

Shoou-Jinn Chang, Chih-Wei Yang, Sheng-Po Chang, 2014 .

A highly symmetrical 10 transistor 2-read/write dual-port static random access memory bitcell design in 28 nm high-k/metal-gate planar bulk CMOS technology

Koji Nii, Yohei Sawada, Yuichiro Ishii, 2018 .

Electrical characteristics of nMOSFETs fabricated on hybrid orientation substrate with amorphization/templated recrystallization method

Osbert Cheng, Po-Chin Huang, San Lein Wu, 2010, Microelectron. Reliab..

Investigation of an anomalous hump in gate current after negative-bias temperature-instability in HfO2/metal gate p-channel metal-oxide-semiconductor field-effect transistors

Simon M. Sze, Osbert Cheng, Tseung-Yuen Tseng, 2013 .

Impact of Mechanical Strain on GIFBE in PD SOI p-MOSFETs as Indicated From NBTI Degradation

Osbert Cheng, Ting-Chang Chang, Cheng Tung Huang, 2012, IEEE Electron Device Letters.

Impact of oxygen annealing on high-k gate stack defects characterized by random telegraph noise

Chia-Wei Hsu, Osbert Cheng, Shoou-Jinn Chang, 2012 .

On the Origin of Hole Valence Band Injection on GIFBE in PD SOI n-MOSFETs

Osbert Cheng, Ann-Kuo Chu, Guangrui Xia, 2010, IEEE Electron Device Letters.