Aivars J. Lelis

Towards a Robust Approach to Threshold Voltage Characterization and High Temperature Gate Bias Qualification

Ronald Green, Daniel B. Habersat, Aivars J. Lelis, 2020, 2020 IEEE International Reliability Physics Symposium (IRPS).

Reliability and Performance Issues in SiC MOSFETs: Insight Provided by Spin Dependent Recombination

Patrick M. Lenahan, Daniel J. Lichtenwalner, Aivars J. Lelis, 2019, 2019 IEEE International Reliability Physics Symposium (IRPS).

Permanent and Transient Effects of High-Temperature Bias Stress on Room- Temperature $V_{T}$ Drift Measurements in SiC Power MOSFETs

Ronald Green, Daniel B. Habersat, Aivars J. Lelis, 2019, 2019 IEEE International Reliability Physics Symposium (IRPS).