N. D'Halleweyn

A physically based relation between extracted threshold voltage and surface potential flat band voltage for MOSFET compact modeling

O. Faynot, William Redman-White, Michael J. Uren, 2001 .

A Compact Model for Silicon-on-Insulator LDMOST, Including Accumulation, Lateral Doping Gradient and High Side Behaviour

William Redman-White, J. Benson, M. Swanenberg, 2001 .

A surface-potential-based high-voltage compact LDMOS transistor model

R. van Langevelde, A. Aarts, N. D'Halleweyn, 2005, IEEE Transactions on Electron Devices.