Herzl Aharoni

发表

Transistor structure relation to secondary breakdown and its effects

A. Bar-Lev, Herzl Aharoni, 1975 .

Two terminal and multiterminal efficient planar Silicon Light Emitting Devices (Si-LED's) fabricated by standard IC technology as components for all silicon monolithic integrated optoelectronic systems

Herzl Aharoni, 2010, 2010 INTERNATIONAL KHARKOV SYMPOSIUM ON PHYSICS AND ENGINEERING OF MICROWAVES, MILLIMETER AND SUBMILLIMETER WAVES.

200-Mbps optical integrated circuit design and first iteration realizations in 1.2- and 0.8-micron Bi-CMOS technology

Lukas W. Snyman, Herzl Aharoni, C.-T. Chaing, 2004, SPIE OPTO.

Horizontal Tunneling And Surface Band Bending: An External Technique For Wavelength Tuning Of Surface-Emitting Light-Emitting Diodes (LEDs)

Norman S. Kopeika, Shlomo Hava, I. Hirsh, 1982, Optics & Photonics.

Properties of light emission from silicon junctions

Lukas W. Snyman, Monuko du Plessis, Herzl Aharoni, 1997, Other Conferences.

Optical sources, integrated optical detectors, and optical waveguides in standard silicon CMOS integrated circuitry

Alice Biber, Lukas W. Snyman, Monuko du Plessis, 2000, Photonics West - Optoelectronic Materials and Devices.

Resistive gate MOS modulation of light emission from a silicon LED array

Monuko du Plessis, Herzl Aharoni, 2002, SPIE OPTO.

An alternative approach for the determination of the "OFF-ON" turnover process in four-layer semiconductor devices

Boris Likhterov, Herzl Aharoni, 2000, IEEE Trans. Educ..

Higher efficiency silicon CMOS light-emitting devices (450nm - 750nm) using current density and carrier injection techniques

Lukas W. Snyman, Monuko du Plessis, Herzl Aharoni, 2005, SPIE OPTO.

Spectral Tuning Of Shallow-Junction Surface-Emitting Light-Emitting Diodes (LEDs) Through γ-Ray Irradiation

Norman S. Kopeika, Shlomo Hava, I. Hirsh, 1982, Optics & Photonics.

Two order increase in the optical emission intensity of CMOS integrated circuit Si LED's (450nm - 750nm). Injection-avalanche based n+pn and p+np designs

Lukas W. Snyman, Monuko du Plessis, Herzl Aharoni, 2007, SPIE OPTO.

Experimental study of the optical properties of LTCVD SiO2

Pieter L. Swart, Herzl Aharoni, H. Aharoni, 1991, Other Conferences.

Light emission from two junction Si CMOS LED’s (450nm ? 750nm) with two order increase in emission intensity - Applications for next generation silicon-based optoelectronics

Lukas W. Snyman, M. du Plessis, Herzl Aharoni, 2006 .

The spatial distribution of light from silicon LEDs

Monuko du Plessis, Herzl Aharoni, M. Plessis, 1996 .

Silicon LEDs fabricated in standard VLSI technology as components for all silicon monolithic integrated optoelectronic systems

Lukas W. Snyman, M. du Plessis, Herzl Aharoni, 2002 .

Analysis of n+p Silicon Junctions with Varying Substrate Doping Concentrations Made under Ultraclean Processing Technology

Tadahiro Ohmi, Akira Nakada, Herzl Aharoni, 1997 .

Electro-optical properties of thin indium tin oxide films: Limitations on performance☆

Herzl Aharoni, Ramesh Dhere, Timothy J. Coutts, 1987 .

In situ computerized optical reflectivity measurement system for ion implantation

Pieter L. Swart, Herzl Aharoni, M. F. Grobler, 1993 .

Two- and multi-terminal CMOS/BiCMOS Si LED’s

Lukas W. Snyman, Monuko du Plessis, Herzl Aharoni, 2005 .

Planar light-emitting electro-optical interfaces in standard silicon complementary metal oxide semiconductor integrated circuitry

Alice Biber, Lukas W. Snyman, Monuko du Plessis, 2002 .

Microcrystalline/Amorphous Thin Si Films Deposition by a Newly Developed Dual Injection System Employing Hydrogen Plasma and Silicon Radicals at Low Temperature (300 °C) Chemical Vapor Deposition Process

Tadahiro Ohmi, Masaki Hirayama, Herzl Aharoni, 2007 .

A silicon transconductance light emitting device (TRANSLED)

Lukas W. Snyman, Monuko du Plessis, Herzl Aharoni, 2000 .

Increased efficiency of silicon light-emitting diodes in a standard 1.2-μm silicon complementary metal oxide semiconductor technology

Lukas W. Snyman, Monuko du Plessis, Herzl Aharoni, 1998 .

Si light-emitting device in integrated photonic CMOS ICs

Lukas W. Snyman, Kaikai Xu, Herzl Aharoni, 2017 .

Injection-Avalanche-Based n+pn Silicon Complementary Metal–Oxide–Semiconductor Light-Emitting Device (450–750 nm) with 2-Order-of-Magnitude Increase in Light Emission Intensity

Lukas W. Snyman, Monuko du Plessis, Herzl Aharoni, 2007 .

Characterization of breakdown phenomena in light emitting silicon n+p diodes

Lukas W. Snyman, Monuko du Plessis, Herzl Aharoni, 1998 .