M. Alegre

发表

Dislocation generation mechanisms in heavily boron-doped diamond epilayers

M. Villar, F. Lloret, D. Araujo, 2021 .

TEM study of defects versus growth orientations in heavily boron‐doped diamond

J. Gonzalez-Leal, D. Eon, É. Bustarret, 2015 .

Hydrogen passivation of boron acceptors in as-grown boron-doped CVD diamond epilayers

F. Omnès, J. Navas, R. Alcántara, 2010 .

Critical boron-doping levels for generation of dislocations in synthetic diamond

D. Araújo, J. Piñero, F. Jomard, 2014 .

Local boron doping quantification in homoepitaxial diamond structures

D. Araújo, F. Jomard, É. Bustarret, 2010 .

Interfacial integrity enhancement of atomic layer deposited alumina on boron doped diamond by surface plasma functionalization

Rui F. Silva, F. Oliveira, M. Neto, 2020 .

Metal–oxide–diamond interface investigation by TEM: Toward MOS and Schottky power device behavior

J. Pernot, J. Piñero, M. Villar, 2014 .