E. Robilliart

Integration of ultra-shallow junctions in sub-0.1 /spl mu/m CMOS transistors : what kind of process for a "safe" advanced technology?

T. Skotnicki, D. Lenoble, O. Kermarrec, 2001, Extended Abstracts of the Second International Workshop on Junction Technology. IWJT. (IEEE Cat.No.01EX541C).

Electrical analysis of mechanical stress induced by STI in short MOSFETs using externally applied stress

G. Reimbold, G. Ghibaudo, S. Orain, 2004, IEEE Transactions on Electron Devices.