J. Wei

Impact of Process Induced Defects on the Contact Characteristics of Ti/Graphene Devices

Haozhe Yu, M. F. Li, Wenjun Liu, 2011 .

Understanding Asymmetric Transportation Behavior in Graphene Field-Effect Transistors Using Scanning Kelvin Probe Microscopy

W. J. Liu, K. Pey, Q. Zhang, 2011, IEEE Electron Device Letters.

Understanding the contact characteristics in single or multi-layer graphene devices: The impact of defects (carbon vacancies) and the asymmetric transportation behavior

W. J. Liu, H. Hu, K. Pey, 2010, 2010 International Electron Devices Meeting.

Physical and electrical characterization of junction between single-layer graphene (SLG) and Ti prepared by various processes

W. J. Liu, B. Tay, H. Hu, 2010, 2010 International Workshop on Junction Technology Extended Abstracts.

$V_{\rm th}$ Shift in Single-Layer Graphene Field-Effect Transistors and Its Correlation With Raman Inspection

Z. R. Wang, J. F. Zhang, W. J. Liu, 2012, IEEE Transactions on Device and Materials Reliability.

Positive Bias-Induced $V_{\rm th}$ Instability in Graphene Field Effect Transistors

J. F. Zhang, W. J. Liu, X. A. Tran, 2012, IEEE Electron Device Letters.