B. Balland

Chapter 6 Charge pumping techniques: Their use for diagnosis and interface states studies in MOS transistors

J.-L. Autran, B. Balland, G. Barbottin, 1999 .

Fabrication and characterization of Si-MOSFET's with PECVD amorphous Ta 2 O 5 gate insulator

B. Balland, Jean-Luc Autran, J. Autran, 1997 .

A new third‐level charge pumping method for accurate determination of interface‐trap parameters in metal‐oxide‐semiconductor field‐effect‐transistors

B. Balland, Jean-Luc Autran, J. Autran, 1994 .