J. Tang

Growth and characterization of AlGaN/GaN heterostructure using unintentionally doped AlN/GaN superlattices as barrier layer

Linqin Jiang, H. Xiao, Xiaoliang Wang, 2009 .

High-performance top-gated monolayer SnS2 field-effect transistors and their integrated logic circuits.

S. L. Li, Liang Gao, K. Tsukagoshi, 2013, Nanoscale.

The influence of AlN buffer layer thickness grown by pulsed atomic layer epitaxy on the properties of GaN epilayer

Jin Zhang, C. Q. Chen, H. Xiong, 2011, Other Conferences.