Yan-Kui Liang

Electrical Characteristics of Ultrathin InZnO Thin-Film Transistors Prepared by Atomic Layer Deposition

Po-Tsun Liu, S. Yeong, C. Kei, 2023, IEEE Transactions on Electron Devices.

ZrO2-HfO2 Superlattice Ferroelectric Capacitors With Optimized Annealing to Achieve Extremely High Polarization Stability

Y. Chu, S. Yeong, Chun-Hsiung Lin, 2022, IEEE Electron Device Letters.

Demonstration of Highly Robust 5 nm Hf0.5Zr0.5O₂ Ultra-Thin Ferroelectric Capacitor by Improving Interface Quality

C. Su, E. Chang, Chun-Hsiung Lin, 2021, IEEE Electron Device Letters.

Effects of In/Zn composition on the Performance of Ultra-thin Atomic Layer Deposited InxZnl-xO Channel Thin-Film Transistors

C. Kei, Chun-Hsiung Lin, Chun-Chieh Lu, 2023, 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).

Aggressively Scaled Atomic Layer Deposited Amorphous InZnOx Thin Film Transistor Exhibiting Prominent Short Channel Characteristics (SS= 69 mV/dec.; DIBL = 27.8 mV/V) and High Gm(802 μS/μm at VDS = 2V)

T. Chao, Y. Tseng, C. Kei, 2023, 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits).

InGaZnO Ferroelectric Thin-Film Transistor Using HfO₂/Al₂O₃/AlN Hybrid Gate Dielectric Stack With Ultra-Large Memory Window

C. Dee, Po-Tsun Liu, You-Chen Weng, 2022, IEEE Electron Device Letters.

Highly Stable Short Channel Ultrathin Atomic Layer Deposited Indium Zinc Oxide Thin Film Transistors With Excellent Electrical Characteristics

T. Chao, Y. Tseng, C. Chiu, 2023, IEEE Electron Device Letters.