C. Anderson

发表

Material-Process Interactions in the Annealing of Gallium Arsenide

C. Anderson, 1981 .

Optical studies of Be‐implanted GaAs

W. Spitzer, H. Dunlap, S. Kwun, 1979 .

Photoelectron injection at metal-semiconductor interfaces

C. R. Crowell, C. Kao, C. Anderson, 1980 .

Low‐temperature annealing behavior of GaAs implanted with Be

H. Dunlap, C. L. Anderson, C. Anderson, 1979 .

GaAs MESFET fabrication using maskless ion implantation

E. H. Stevens, R. Kubena, R. Seliger, 1981, IEEE Electron Device Letters.

High current density Ga+ implantations into Si

R. Seliger, H. Dunlap, R. R. Hart, 1979 .

Silicon epitaxy by solid‐phase crystallization of deposited amorphous films

J. A. Roth, C. L. Anderson, C. Anderson, 1977 .

Threshold Energies for Electron-Hole Pair Production by Impact Ionization in Semiconductors

C. R. Crowell, C. L. Anderson, C. Anderson, 1972 .

Improvements in GaAs/plasma‐deposited silicon nitride interface quality by predeposition GaAs surface treatment and postdeposition annealing

C. L. Anderson, M. D. Clark, C. Anderson, 1982 .

A convenient operational equivalent to the fowler photothreshold plot

C. R. Crowell, V. L. Rideout, C. L. Anderson, 1972 .

Pinhole electrical conductivity in polycrystalline Si on locally etched SiN /SiO passivating contacts for Si solar cells

H. Guthrey, P. Stradins, W. Nemeth, 2023, Materials Science in Semiconductor Processing.