R. Huang

Single-Mode CMOS 6T-SRAM Macros With Keeper-Loading-Free Peripherals and Row-Separate Dynamic Body Bias Achieving 2.53fW/bit Leakage for AIoT Sensing Platforms

Linxiao Shen, Peiyu Chen, Tianyi Liu, 2022, IEEE International Solid-State Circuits Conference.

Variability-and reliability-aware design for 16/14nm and beyond technology

R. Huang, X. B. Jiang, S. F. Guo, 2017, 2017 IEEE International Electron Devices Meeting (IEDM).

Understanding charge traps for optimizing Si-passivated Ge nMOSFETs

B. Kaczer, L. Witters, N. Collaert, 2016, 2016 IEEE Symposium on VLSI Technology.