F. Danesin

Mechanisms of RF Current Collapse in AlGaN–GaN High Electron Mobility Transistors

G. Meneghesso, F. Fantini, E. Zanoni, 2008, IEEE Transactions on Device and Materials Reliability.

Reliability aspects ofGaN-HEMTsoncomposite substrates

Augusto Tazzoli, Robert Langer, Alessandro Chini, 2008 .

A review of failure modes and mechanisms of GaN-based HEMTs

G. Meneghesso, M. Meneghini, A. Tazzoli, 2007, 2007 IEEE International Electron Devices Meeting.

ESD robustness of AlGaN/GaN HEMT devices

G. Meneghesso, A. Tazzoli, E. Zanoni, 2007, 2007 29th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD).