Julian J. Sanchez

Unified model for Q BD prediction for thin gate oxide MOS devices with constant voltage and current stress

Thomas A. DeMassa, Julian J. Sanchez, T. DeMassa, 2000 .

Modeling of time dependence of hole current and prediction of QBD and tBD for thin gate MOS devices based upon anode hole injection

Dieter K. Schroder, Thomas A. DeMassa, D. Schroder, 2001 .

Application of the MOS charge-sheet model to nonuniform doping along the channel

James Victory, Thomas A. DeMassa, B. D. Welfert, 1995 .

Generalization of the metal‐oxide‐semiconductor charge‐sheet model to two dimensions

T. DeMassa, Julian J. Sanchez, 1988 .

Modeling gate emissions: a review—part I

Julian J. Sanchez, T. DeMassa, Julian J. Sanchez, 1993 .