Zacharias Hatzopoulos

III-V material and device aspects for the monolithic integration of GaAs devices on Si using GaAs/Si low temperature wafer bonding

Alexandros Georgakilas, D. Cengher, G. Halkias, 2001, 2001 International Semiconductor Conference. CAS 2001 Proceedings (Cat. No.01TH8547).

Polarization field effects on optical gain and lasing characteristics of III-V nitride and arsenide quantum wells

Zacharias Hatzopoulos, George Deligeorgis, Giorgos Dialynas, 2005, SPIE OPTO.

A technology for GaAs-based optoelectronic integrated circuits

Alexandros Georgakilas, D. Cengher, M. Cengher, 2000, 2000 International Semiconductor Conference. 23rd Edition. CAS 2000 Proceedings (Cat. No.00TH8486).