Takahisa Eimori

Features of SOI DRAM's and their Potential for Low-Voltage and/or Giga-Bit Scale DRAM's (Special Issue on ULSI Memory Technology)

Hideto Hidaka, Katsuhiro Suma, Kazuyasu Fujishima, 1996 .

A 34 ns 256 Mb DRAM with boosted sense-ground scheme

Hideto Hidaka, Masaki Tsukude, Kazuyasu Fujishima, 1994, Proceedings of IEEE International Solid-State Circuits Conference - ISSCC '94.