N. Goel

A physics based model for NBTI in p-MOSFETs

S. Mahapatra, N. Goel, K. Joshi, 2012, 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology.

A comprehensive AC / DC NBTI model: Stress, recovery, frequency, duty cycle and process dependence

S. Mukhopadhyay, S. Mahapatra, N. Goel, 2013, 2013 IEEE International Reliability Physics Symposium (IRPS).

A comprehensive DC/AC model for ultra-fast NBTI in deep EOT scaled HKMG p-MOSFETs

S. Mahapatra, N. Goel, N. Nanaware, 2014, 2014 IEEE International Reliability Physics Symposium.

Trap Generation in IL and HK layers during BTI / TDDB stress in scaled HKMG N and P MOSFETs

S. Mahapatra, N. Goel, K. Joshi, 2014, 2014 IEEE International Reliability Physics Symposium.

A consistent physical framework for N and P BTI in HKMG MOSFETs

S. Mahapatra, N. Goel, K. Joshi, 2012, 2012 IEEE International Reliability Physics Symposium (IRPS).

Investigation of stochastic implementation of reaction diffusion (RD) models for NBTI related interface trap generation

S. Mahapatra, T. Naphade, N. Goel, 2013, 2013 IEEE International Reliability Physics Symposium (IRPS).