W. Morris

The influence of heavily doped buried layer implants on electrostatic discharge (ESD), latchup, and a silicon germanium heterojunction bipolar transistor in a BiCMOS SiGe technology

L. Lanzerotti, S. Voldman, W. Morris, 2004, 2004 IEEE International Reliability Physics Symposium. Proceedings.

Epi-replacement in CMOS technology by high dose, high energy boron implantation into Cz substrates

K. K. Bourdelle, R. A. Ashton, Y. Chen, 2000, 2000 International Conference on Ion Implantation Technology Proceedings. Ion Implantation Technology - 2000 (Cat. No.00EX432).

Extended defects in silicon by MeV B++ implantation in different 8" Cz-Si wafers

M. Stutzmann, J. Brunner, L. Rubin, 1998, 1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144).

Latchup in CMOS

W. Morris, W. Morris, 2003, 2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual..

Buried layer/connecting layer high energy implantation for improved CMOS latch-up

L. Rubin, W. Morris, D. Wristers, 1996, Proceedings of 11th International Conference on Ion Implantation Technology.

Superior latch-up resistance of high dose, high energy implanted p/sup +/ buried layers

L. Chan, W. Morris, L. Chan, 1999, 1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144).