Yong-Hee Lee

Correlation between the Surface Undulation and Luminescence Characteristics in Semi-Polar 112¯2 InGaN/GaN Multi-Quantum Wells

M. Sheen, Cheol‐Woong Yang, Jong-Hwa Baek, 2023, Nanomaterials.

Application of the deuterium sintering process to improve the device design rule in reducing plasma induced damages

K. Hess, J. Lyding, K. Cheng, 1999, International Symposium on Plasma Process-Induced Damage.

Luminescence properties related anti-phase domain of alpha-Ga2O3

Ho Won Jang, Yongjo Park, E. Yoon, 2023, APL Materials.

Origin of extra diffraction spots for high crystalline alpha-Ga2O3

Ho Won Jang, Yongjo Park, E. Yoon, 2023, AIP Advances.

An alternative interpretation of hot electron interface degradation in NMOSFETs: isotope results irreconcilable with major defect generation by holes?

K. Hess, J. Lyding, Young-Wug Kim, 1999 .