Chang-Hung Yu

New Findings on the Drain-Induced Barrier Lowering Characteristics for Tri-Gate Germanium-on-Insulator p-MOSFETs

P. Su, S. Wu, Chang-Hung Yu, 2015, IEEE Journal of the Electron Devices Society.

Investigation of Multi- $V_{\mathrm {th}}$ Efficiency for Trigate GeOI p-MOSFETs Using Analytical Solution of 3-D Poisson’s Equation

P. Su, S. Wu, Chang-Hung Yu, 2015, IEEE Transactions on Electron Devices.

Benchmarking of Monolayer and Bilayer Two-Dimensional Transition Metal Dichalcogenide (TMD) Based Logic Circuits and 6T SRAM Cells

Ching-Te Chuang, Pin Su, Chang-Hung Yu, 2016, ISLPED.

Performance and Stability Benchmarking of Monolithic 3-D Logic Circuits and SRAM Cells With Monolayer and Few-Layer Transition Metal Dichalcogenide MOSFETs

C. Chuang, P. Su, C. Yu, 2017, IEEE Transactions on Electron Devices.

Evaluation of Monolayer and Bilayer 2-D Transition Metal Dichalcogenide Devices for SRAM Applications

Ching-Te Chuang, Ming-Long Fan, Vita Pi-Ho Hu, 2016, IEEE Transactions on Electron Devices.

Impact of Random Variations on Cell Stability and Write-Ability of Low-Voltage SRAMs Using Monolayer and Bilayer Transition Metal Dichalcogenide (TMD) MOSFETs

C. Chuang, P. Su, C. Yu, 2016, IEEE Electron Device Letters.

Theoretical Investigation of DIBL Characteristics for Scaled Tri-Gate InGaAs-OI n-MOSFETs Including Sensitivity to Process Variations

P. Su, S. Wu, Chien-Lin Yu, 2017, IEEE Journal of the Electron Devices Society.