Boris J. Ber

Estimation of the displacement threshold energies in Si and GaAs by means of ion sputtering of structures with thin marker layers

Yuri V. Trushin, V. S. Kharlamov, Boris J. Ber, 2001, Other Conferences.

Computer simulation and SIMS profiling of Zn implantation in A3B5 semiconductors

Yuri V. Trushin, Boris J. Ber, Evgeni E. Zhurkin, 2002, Other Conferences.

Er-induced Ga-Al interdiffusion in GaAs/AlGaAs quantum structures

Irina N. Yassievich, Galina Khitrova, V. F. Masterov, 1997, Photonics West.

Displacement threshold energies of impurity atoms in GaAs heterostructures

Yuri V. Trushin, V. S. Kharlamov, Boris J. Ber, 1999, Other Conferences.