L.-J. Li

Sub-0.5 nm Interfacial Dielectric Enables Superior Electrostatics: 65 mV/dec Top-Gated Carbon Nanotube FETs at 15 nm Gate Length

H. Wong, S. Mitra, G. Pitner, 2020, 2020 IEEE International Electron Devices Meeting (IEDM).

Contact Engineering for High-Performance N-Type 2D Semiconductor Transistors

J. Bokor, J. Kong, Jing Guo, 2021, 2021 IEEE International Electron Devices Meeting (IEDM).