Ji Chao Hu

Low Defect Thick Homoepitaxial Layers Grown on 4H-SiC Wafers for 6500 V JBS Devices

Renxu Jia, Lidong Tian, Y. Niu, 2019, Materials Science Forum.

Low Pressure Homoepitaxial Growth of 4H-SiC on 4°off-Axis Substrates

Renxu Jia, B. Xin, YueHu Wang, 2015 .

SiC Trenched Schottky Diode with Step-Shaped Junction Barrier for Superior Static Performance and Large Design Window

Bingshan Liu, Xi Wang, H. Pu, 2020 .