C. Stapelmann

On the role of nanocavities in suppressing boron transient enhanced diffusion and deactivation in F+ coimplanted silicon

T. Hoffmann, H. Cerva, C. Vrancken, 2008 .

Shallow Trench Isolation for the 45-nm CMOS Node and Geometry Dependence of STI Stress on CMOS Device Performance

K.-H. Bach, A. Jain, M. Eller, 2007, IEEE Transactions on Semiconductor Manufacturing.