A. Divay

A Very Robust and Reliable 2.7GHz +31dBm Si RFSOI Transistor for Power Amplifier Solutions

X. Garros, J. Cluzel, F. Cacho, 2019, 2019 IEEE International Electron Devices Meeting (IEDM).

A 22nm FDSOI Technology Optimized for RF/mmWave Applications

J. Mazurier, D. Harame, J. Watts, 2018, 2018 IEEE Radio Frequency Integrated Circuits Symposium (RFIC).

Extraction of physical Schottky parameters using the Lambert function in Ni/AlGaN/GaN HEMT devices with defined conduction phenomena

A. Divay, Olivier Latry, D. Fadil, 2017 .