Alexander Zaslavsky

发表

Numerical queue solution of thermal noise-induced soft errors in subthreshold CMOS devices

Joseph L. Mundy, R. Iris Bahar, William R. Patterson, 2010, GLSVLSI '10.

A Model for Soft Errors in the Subthreshold CMOS Inverter

R. Iris Bahar, Joseph L. Mundy, Dimitrios Kazazis, 2006 .

Design of error-resilient logic gates with reinforcement using implications

R. Iris Bahar, William R. Patterson, Alexander Zaslavsky, 2016, 2016 International Great Lakes Symposium on VLSI (GLSVLSI).

Designing logic circuits for probabilistic computation in the presence of noise

Joseph L. Mundy, R. Iris Bahar, William R. Patterson, 2005, Proceedings. 42nd Design Automation Conference, 2005..

Techniques for Designing Noise-Tolerant Multi-Level Combinational Circuits

Joseph L. Mundy, R. Iris Bahar, William R. Patterson, 2007, 2007 Design, Automation & Test in Europe Conference & Exhibition.

A noise-immune sub-threshold circuit design based on selective use of Schmitt-trigger logic

Joseph L. Mundy, Fabio Cremona, Warren Jin, 2012, GLSVLSI '12.

A Simulation Framework for Analyzing Transient Effects Due to Thermal Noise in Sub-Threshold Circuits

R. Iris Bahar, William R. Patterson, Alexander Zaslavsky, 2015, ACM Great Lakes Symposium on VLSI.

Designing MRF based Error Correcting Circuits for Memory Elements

Joseph L. Mundy, R. Iris Bahar, William R. Patterson, 2006, Proceedings of the Design Automation & Test in Europe Conference.

Optimizing noise-immune nanoscale circuits using principles of Markov random fields

Joseph L. Mundy, R. Iris Bahar, William R. Patterson, 2006, GLSVLSI '06.

Designing Nanoscale Logic Circuits Based on Markov Random Fields

Joseph L. Mundy, R. Iris Bahar, William R. Patterson, 2007, J. Electron. Test..

Thermally-induced soft errors in nanoscale CMOS circuits

Hua Li, Joseph L. Mundy, R. Iris Bahar, 2007, 2007 IEEE International Symposium on Nanoscale Architectures.

MRF Reinforcer: A Probabilistic Element for Space Redundancy in Nanoscale Circuits

Joseph L. Mundy, R. Iris Bahar, William R. Patterson, 2006, IEEE Micro.

A Sub-Threshold Noise Transient Simulator Based on Integrated Random Telegraph and Thermal Noise Modeling

R. Iris Bahar, William R. Patterson, Alexander Zaslavsky, 2018, IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems.

Z2-FET used as 1-transistor high-speed DRAM

Cyrille Le Royer, Sorin Cristoloveanu, Jing Wan, 2012, 2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC).

A fast simulator for the analysis of sub-threshold thermal noise transients

R. Iris Bahar, William R. Patterson, Alexander Zaslavsky, 2016, 2016 53nd ACM/EDAC/IEEE Design Automation Conference (DAC).

Nonclassical devices in SOI: Genuine or copyright from III-V

Serge Luryi, Alexander Zaslavsky, S. Luryi, 2007 .

Synchronisation de système et d'émetteur-récepteur pour minimiser le nombre requis de sources de référence dans des applications cellulaires multifonctions notamment le gps

Alexander Zaslavsky, Gregory Uehara, Brian Brunn, 2010 .

Ultrathin silicon-on-insulator vertical tunneling transistor

Sorin Cristoloveanu, Simon Deleonibus, Serge Luryi, 2003 .

Ultrathin epitaxial germanium on crystalline oxide metal-oxide-semiconductor-field-effect transistors

Dimitrios Kazazis, Supratik Guha, Alexander Zaslavsky, 2005 .

Broadband visible-to-telecom wavelength germanium quantum dot photodetectors

Domenico Pacifici, Dongfang Li, Alexander Zaslavsky, 2018, Applied Physics Letters.

Tunneling field-effect transistor with epitaxial junction in thin germanium-on-insulator

Sorin Cristoloveanu, Laurent Clavelier, Dimitrios Kazazis, 2009 .

SOI TFETs: Suppression of ambipolar leakage and low-frequency noise behavior

Sorin Cristoloveanu, Jing Wan, Cyrille Le Royer, 2010, 2010 Proceedings of the European Solid State Device Research Conference.

Double-gate MOSFETs: performance and technology options

Frederic Allibert, Sorin Cristoloveanu, Alexander Zaslavsky, 2001, 2001 International Semiconductor Device Research Symposium. Symposium Proceedings (Cat. No.01EX497).

Low-frequency noise behavior of tunneling field effect transistors

Sorin Cristoloveanu, Jing Wan, C. Le Royer, 2010 .

Reduction of reflection losses in ZnGeP2 using motheye antireflection surface relief structures

Alexander Zaslavsky, G. Sonek, C. Aydin, 2002 .