H. Q. Zheng

发表

Effect of rapid thermal annealing on InGaAs/GaAs quantum wells

S. Yoon, Yiping Zeng, Q. Zhuang, 2000 .

Electrical and optical properties of Si-doped InP grown by solid source molecular beam epitaxy using a valved phosphorus cracker cell

G. Ng, S. Yoon, H. Zheng, 2000 .

In0.48Ga0.52P/In0.20Ga0.80As/GaAs pseudomorphic high electron mobility transistors grown by solid-source molecular-beam epitaxy using a valved phosphorus cracker cell

S. Yoon, B. Gay, H. Q. Zheng, 2000 .

Fabrication of strained and double heterojunction In/sub x/Ga/sub 1-x/P/In/sub 0.2/Ga/sub 0.8/As high electron mobility transistors grown by solid-source molecular beam epitaxy

S. Yoon, H. Zheng, J. Degenhardt, 2000 .

Fabrication and characterisation of double heterojunction In0.48Ga0.52P/In0.20Ga0.80As high electron mobility transistors grown by solid-source molecular beam epitaxy

S. Yoon, H. Zheng, J. Degenhardt, 1999 .

Characterization of silicon-doped InP grown by solid-source molecular beam epitaxy using a valved phosphorus cracker cell

G. Ng, K. Radhakrishnan, S. Yoon, 1999 .

Molecular beam epitaxial growth of high-quality InP layers from solid phosphorus using a valved phosphorus cracker cell

S. Yoon, H. Zheng, H. Q. Zheng, 1998 .

Electrical, optical and surface morphology characteristics of InP grown using a valved phosphorus cracker cell in solid source molecular beam epitaxy

S. Yoon, H. Q. Zheng, 1998 .

Characteristics of InP epitaxial layers grown from solid phosphorus using a valve phosphorus cracker cell

S. Yoon, H. Zheng, H. Q. Zheng, 1998 .

Optimisation of InP growth by molecular beam epitaxy using a valve phosphorus cracker cell

S. Yoon, H. Zheng, H. Q. Zheng, 1998 .

Transport and photoluminescence of silicon-doped GaInP grown by a valved phosphorus cracker cell in solid source molecular beam epitaxy

S. Yoon, K. W. Mah, H. Q. Zheng, 1999 .

GaInAsP grown on GaAs substrate by solid source molecular beam epitaxy with a valve phosphorous cracker cell

S. Yoon, D. Zhang, X. Wang, 2000 .

Growth of self-organized InAs quantum dots on InP by solid-source molecular beam epitaxy

S. Yoon, Q. Zhuang, H. Zheng, 2000 .

Photoluminescence properties of self-assembled InAs quantum dots grown on InP substrates by solid source molecular beam epitaxy

S. Yoon, Q. Zhuang, H. Zheng, 2001 .

Growth and emission tuning of InAs/InP quantum dots superlattice

S. Yoon, Q. Zhuang, H. Q. Zheng, 2001 .

Arsenic/phosphorus exchange and wavelength tuning of in situ annealed InAs/InP quantum dot superlattice

S. Yoon, Q. Zhuang, H. Q. Zheng, 2001 .

Optimization of InxGa1−xAs/InyAl1−yAs high electron mobility transistor structures grown by solid-source molecular beam epitaxy

G. Ng, S. Yoon, H. Zheng, 2001 .

High-resolution X-ray diffraction study of strained InGaAsP/InP multiple quantum well structures grown using all solid sources

D. Zhang, C. Kam, H. Q. Zheng, 2001 .