M. Mattingley

Multi-wafer growth of GaInAs photodetectors on 4" InP by MOCVD for SWIR imaging applications

Mark J. Furlong, M. J. Furlong, Mark Mattingley, 2013, Photonics West - Optoelectronic Materials and Devices.

Multi-wafer growth of GaInAs photodetectors on 4" InP by MOCVD for SWIR imaging applications

Mark J. Furlong, M. J. Furlong, Mark Mattingley, 2014, Defense + Security Symposium.

A study of insulated and passivated gate technology for InP FETs

O. Aina, A. Iliadis, E. Martín, 1990, International Conference on Indium Phosphide and Related Materials.