S. Renard

Modelling of 1T-NOR flash operations for consumption optimization and reliability investigation

G. Reimbold, D. Roy, J. Coignus, 2016, 2016 IEEE International Reliability Physics Symposium (IRPS).

Reliability issues related to Fast Charge Loss Mechanism in Embedded Non Volatile Memories

G. Ghibaudo, G. Pananakakis, S. Renard, 2006, 2006 IEEE International Integrated Reliability Workshop Final Report.

Impact of the gate-stack change from 40nm node SiON to 28nm High-K Metal Gate on the Hot-Carrier and Bias Temperature damage

X. Federspiel, D. Angot, V. Huard, 2013, 2013 IEEE International Reliability Physics Symposium (IRPS).