Dionyz Pogany

发表

Error analysis in phase extraction in a 2D holographic imaging of semiconductor devices

V. Dubec, Sergey Bychikhin, Dionyz Pogany, 2004, IS&T/SPIE Electronic Imaging.

Experimental and Theoretical Analyses of the Electrical SOA of Rugged p-Channel LDMOS

Dionyz Pogany, Erich Gornik, Alevtina Podgaynaya, 2010, IEEE Electron Device Letters.

Multiple-time-instant 2D thermal mapping during a single ESD event

Sergey Bychikhin, Dionyz Pogany, Erich Gornik, 2004, Microelectron. Reliab..

Hot spot analysis during thermal shutdown of SOI BCDMOS half bridge driver for automotive applications

Dionyz Pogany, Michael Heer, P. Grombach, 2008, Microelectron. Reliab..

Device Simulation and Backside Laser Interferometry--Powerful Tools for ESD Protection Development

Dionyz Pogany, Erich Gornik, Martin Litzenberger, 2002, Microelectron. Reliab..

Effect of pulse risetime on trigger homogeneity in single finger grounded gate nMOSFET electrostatic discharge protection devices

Sergey Bychikhin, Dionyz Pogany, Erich Gornik, 2001, Microelectron. Reliab..

Random telegraph noise and leakage current in smart power technology DMOS devices

Dionyz Pogany, Erich Gornik, Matthias Stecher, 2000 .

A dual-beam Michelson interferometer for investigation of trigger dynamics in ESD protection devices under very fast TLP stress

Sergey Bychikhin, Dionyz Pogany, Erich Gornik, 2003, Microelectron. Reliab..

Interferometric temperature mapping during ESD stress and failure analysis of smart power technology ESD protection devices

Dionyz Pogany, Erich Gornik, Harald Gossner, 1999 .

Backside interferometric methods for localization of ESD-induced leakage current and metal shorts

Sergey Bychikhin, Dionyz Pogany, Erich Gornik, 2007, Microelectron. Reliab..

TIM, EMMI and 3D TCAD analysis of discrete-technology SCRs

Dionyz Pogany, Guido Notermans, Clément Fleury, 2017, Microelectron. Reliab..

Automated setup for thermal imaging and electrical degradation study of power DMOS devices

Sergey Bychikhin, Dionyz Pogany, Erich Gornik, 2005, Microelectron. Reliab..

E-mode AlGaN/GaN True-MOS, with high-k ZrO2 gate insulator

Dionyz Pogany, Gottfried Strasser, Ole Bethge, 2015, 2015 45th European Solid State Device Research Conference (ESSDERC).

Experimental and numerical analysis of current flow homogeneity in low voltage SOI multi-finger gg-NMOS and NPN ESD protection devices

Sergey Bychikhin, Dionyz Pogany, Michael Heer, 2007, Microelectron. Reliab..

IEC vs. HBM: How to optimize on-chip protections to handle both requirements?

Sergey Bychikhin, Dionyz Pogany, Peter Moens, 2009, 2009 31st EOS/ESD Symposium.

Transient interferometric mapping of smart power SOI ESD protection devices under TLP and vf-TLP stress

Sergey Bychikhin, Dionyz Pogany, Erich Gornik, 2004, Microelectron. Reliab..

Transient interferometric mapping of carrier plasma during external transient latch-up phenomena in latch-up test structures and I/O cells processed in CMOS technology

Dionyz Pogany, Erich Gornik, Michael Heer, 2009, Microelectron. Reliab..

Reliability investigation of the degradation of the surface passivation of InAlN/GaN HEMTs using a dual gate structure

Dionyz Pogany, Gottfried Strasser, Marie-Antoinette di Forte-Poisson, 2012, Microelectron. Reliab..

Thermal analysis of InGaN/GaN (GaN substrate) laser diodes using transient interferometric mapping

Sergey Bychikhin, Dionyz Pogany, Piotr Perlin, 2007, Microelectron. Reliab..

Application of transient interferometric mapping method for ESD and latch-up analysis

Sergey Bychikhin, Dionyz Pogany, Erich Gornik, 2011, Microelectron. Reliab..

Experimental and simulation analysis of a BCD ESD protection element under the DC and TLP stress conditions

Dionyz Pogany, Erich Gornik, M. Blaho, 2002, Microelectron. Reliab..

IV, noise and electroluminescence analysis of stress-induced percolation paths in AlGaN/GaN high electron mobility transistors

Sergey Bychikhin, Dionyz Pogany, Gaudenzio Meneghesso, 2012, Microelectron. Reliab..

Electro-thermal characterization and simulation of integrated multi trenched XtreMOS power devices

Sergey Bychikhin, Dionyz Pogany, Renaud Gillon, 2010, 2010 16th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC).

Thermal and free carrier laser interferometric mapping and failure analysis of anti-serial smart power ESD protection structures

Sergey Bychikhin, Dionyz Pogany, Erich Gornik, 2001, Microelectron. Reliab..

Analysis of triggering behaviour of high voltage CMOS LDMOS clamps and SCRs during ESD induced latch-up

Sergey Bychikhin, Dionyz Pogany, Erich Gornik, 2006, Microelectron. Reliab..

Improved thermal management of low voltage power devices with optimized bond wire positions

Dionyz Pogany, Markus Ladurner, Robert Illing, 2011, Microelectron. Reliab..

Electrical field mapping in InGaP HEMTs and GaAs terahertz emitters using backside infrared OBIC technique

Sergey Bychikhin, Dionyz Pogany, Erich Gornik, 2002, Microelectron. Reliab..

Review of bias-temperature instabilities at the III-N/dielectric interface

Dionyz Pogany, M. Reiner, Clemens Ostermaier, 2018, Microelectron. Reliab..

Study of internal behavior in a vertical DMOS transistor under short high current stress by an interferometric mapping method

Dionyz Pogany, Erich Gornik, Matthias Stecher, 2003, Microelectron. Reliab..

Simulation and experimental study of temperature distribution during ESD stress in smart-power technology ESD protection structures

Dionyz Pogany, Erich Gornik, G. Groos, 2000, 2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059).

Single pulse energy capability and failure modes of n- and p-channel LDMOS with thick copper metallization

Dionyz Pogany, Erich Gornik, Ralf Rudolf, 2010, Microelectron. Reliab..

IR thermography and FEM simulation analysis of on-chip temperature during thermal-cycling power-metal reliability testing using in situ heated structures

Dionyz Pogany, Vladimír Kosel, Michael Glavanovics, 2009, Microelectron. Reliab..

Thermal imaging of smart power DMOS transistors in the thermally unstable regime using a compact transient interferometric mapping system

Sergey Bychikhin, Dionyz Pogany, Erich Gornik, 2009, Microelectron. Reliab..

HMM-TLP correlation for system-efficient ESD design

Sergey Bychikhin, Dionyz Pogany, Dejan M. Maksimovic, 2012, Microelectron. Reliab..

High temperature performances of normally-off p-GaN gate AlGaN/GaN HEMTs on SiC and Si substrates for power applications

Dionyz Pogany, Gottfried Strasser, Joachim Würfl, 2015, Microelectron. Reliab..

Normally-off GaN-HEMTs with p-type gate: Off-state degradation, forward gate stress and ESD failure

Dionyz Pogany, Frank Brunner, Gaudenzio Meneghesso, 2016, Microelectron. Reliab..

Optimization and performance of Al2O3/GaN metal-oxide-semiconductor structures

Dionyz Pogany, Tibor Lalinsky, Jan Kuzmik, 2007, Microelectron. Reliab..

Scanning heterodyne interferometer setup for the time-resolved thermal and free-carrier mapping in semiconductor devices

Sergey Bychikhin, Dionyz Pogany, Erich Gornik, 2005, IEEE Transactions on Instrumentation and Measurement.

Thermal activation of PBTI-related stress and recovery processes in GaN MIS-HEMTs using on-wafer heaters

Dionyz Pogany, Gregor Pobegen, M. Reiner, 2015, 2015 IEEE International Reliability Physics Symposium.

Statistics and localisation of vertical breakdown in AlGaN/GaN HEMTs on SiC and Si substrates for power applications

Sergey Bychikhin, Dionyz Pogany, Gaudenzio Meneghesso, 2013, Microelectron. Reliab..

ESD characterization of multi-finger RF nMOSFET transistors by TLP and transient interferometric mapping technique

Dionyz Pogany, Michael Heer, Werner Simbürger, 2015, Microelectron. Reliab..

Laser-Interferometric Investigation of Triggering Behavior in CMOS and Smart Power ESD Protection Structures

Sergey Bychikhin, Dionyz Pogany, Erich Gornik, 2001 .

Investigation of smart power DMOS devices under repetitive stress conditions using transient thermal mapping and numerical simulation

Sergey Bychikhin, Dionyz Pogany, Renaud Gillon, 2010, Microelectron. Reliab..

Improvement of the electrical safe operating area of a DMOS transistor during ESD events

Dionyz Pogany, Erich Gornik, Alevtina Podgaynaya, 2009, 2009 IEEE International Reliability Physics Symposium.

Electrical and Electroluminescence Characteristics of AlGaN/GaN High Electron Mobility Transistors Operated in Sustainable Breakdown Conditions

Dionyz Pogany, Gaudenzio Meneghesso, Enrico Zanoni, 2013 .

Self-heating phenomena in high-power III-N transistors and new thermal characterization methods developed within EU project TARGET

Sergey Bychikhin, Dionyz Pogany, Christophe Gaquiere, 2009, International Journal of Microwave and Wireless Technologies.

Characterization of Germanium ESD devices

Dionyz Pogany, Mirko Scholz, Dimitri Linten, 2014 .

A differential backside laserprobing technique for the investigation of the lateral temperature distribution in power devices

Dionyz Pogany, Erich Gornik, G. Wachutka, 1999, 11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312).

Origin of large‐amplitude random telegraph signal in silicon bipolar junction transistors after hot carrier degradation

Dionyz Pogany, Gerard Ghibaudo, Alain Chantre, 1996 .

Pump-controlled directional light emission from random lasers.

Dionyz Pogany, Stefan Rotter, Florian Mintert, 2013, Physical review letters.

Small embedded sensors for accurate temperature measurements in DMOS power transistors

Martin Pfost, Sergey Bychikhin, Dionyz Pogany, 2010, 2010 International Conference on Microelectronic Test Structures (ICMTS).

Avalanche Breakdown Delay in ESD Protection Diodes

Dionyz Pogany, Erich Gornik, Matthias Stecher, 2010, IEEE Transactions on Electron Devices.

Self-Heating in GaN Transistors Designed for High-Power Operation

Dionyz Pogany, Gottfried Strasser, Frank Brunner, 2014, IEEE Transactions on Electron Devices.

Study of thermal effects in GaAs micromachined power sensor microsystems by an optical interferometer technique

Dionyz Pogany, Erich Gornik, P. Habas, 1998 .

Quantitative internal thermal energy mapping of semiconductor devices under short current stress using backside laser interferometry

Sergey Bychikhin, Dionyz Pogany, Erich Gornik, 2002 .

Bulk and surface degradation mode in 0.35μm technology gg-nMOS ESD protection devices

Dionyz Pogany, Erich Gornik, Harald Gossner, 2000 .

MOCVD of HfO2 and ZrO2 high-k gate dielectrics for InAlN/AlN/GaN MOS-HEMTs

Dionyz Pogany, Gottfried Strasser, S. Abermann, 2007 .

Modeling small-signal response of GaN-based metal-insulator-semiconductor high electron mobility transistor gate stack in spill-over regime: Effect of barrier resistance and interface states

Dionyz Pogany, Gottfried Strasser, Ole Bethge, 2015 .

Explanation of threshold voltage scaling in enhancement-mode InAlN/AlN–GaN metal oxide semiconductor high electron mobility transistors on Si substrates

Dionyz Pogany, Gottfried Strasser, Ole Bethge, 2012 .

Thermal characterization of MBE-grown GaN/AlGaN/GaN device on single crystalline diamond

Sergey Bychikhin, Dionyz Pogany, C. Gaquiere, 2011 .

Thermal and free carrier concentration mapping during ESD event in smart Power ESD protection devices using an improved laser interferometric technique

Dionyz Pogany, Erich Gornik, G. Groos, 2000 .

Thermally-driven motion of current filaments in ESD protection devices

Sergey Bychikhin, Dionyz Pogany, Erich Gornik, 2005 .

Low-frequency noise sources in as-prepared and aged GaN-based light-emitting diodes

Sergey Bychikhin, Dionyz Pogany, Gaudenzio Meneghesso, 2005 .

Random telegraph signal noise instabilities in lattice-mismatched InGaAs/InP photodiodes

Dionyz Pogany, G. Guillot, 1999 .

Random telegraph signal noise in gate current of unstressed and reverse-bias-stressed AlGaN/GaN high electron mobility transistors

Dionyz Pogany, Gottfried Strasser, Gaudenzio Meneghesso, 2012 .

Role of the dielectric for the charging dynamics of the dielectric/barrier interface in AlGaN/GaN based metal-insulator-semiconductor structures under forward gate bias stress

Dionyz Pogany, Lutz Wilde, Clemens Ostermaier, 2014 .

Study of triggering inhomogeneities in gg-nMOS ESD protection devices via thermal mapping using backside laser interferometry

Dionyz Pogany, Erich Gornik, Wolfgang Fichtner, 2000 .

Thermal distribution during destructive pulses in ESD protection devices using a single-shot two-dimensional interferometric method

V. Dubec, Sergey Bychikhin, Dionyz Pogany, 2003 .

Dynamics of carrier transport via AlGaN barrier in AlGaN/GaN MIS-HEMTs

Dionyz Pogany, Tibor Grasser, Gerhard Prechtl, 2017 .

Single-shot nanosecond thermal imaging of semiconductor devices using absorption measurements

V. Dubec, Sergey Bychikhin, Dionyz Pogany, 2003 .

Fixed interface charges between AlGaN barrier and gate stack composed of in situ grown SiN and Al2O3 in AlGaN/GaN high electron mobility transistors with normally off capability

Dionyz Pogany, Gottfried Strasser, Ole Bethge, 2014 .

Extraction of spatio-temporal distribution of power dissipation in semiconductor devices using nanosecond interferometric mapping technique

Sergey Bychikhin, Dionyz Pogany, Erich Gornik, 2002 .

Investigation of the thermal boundary resistance at the III-nitride/substrate interface using optical methods

Sergey Bychikhin, Dionyz Pogany, Christophe Gaquiere, 2007 .

Interferometric study of thermal dynamics in GaAs-based quantum-cascade lasers

Dionyz Pogany, Erich Gornik, Werner Schrenk, 2003 .

Time-resolved analysis of self-heating in power VDMOSFETs using backside laserprobing

Dionyz Pogany, Erich Gornik, P. Habas, 1997 .

Random telegraph signal noise mechanisms in reverse base current of hot carrier-degraded submicron bipolar transistors: Effect of carrier trapping during stress on noise characteristics

Dionyz Pogany, Gerard Ghibaudo, J. A. Chroboczek, 2001 .