J. Mcvittie

发表

Core-Shell Germanium/Germanium-Tin Nanowires Exhibiting Room-Temperature Direct- and Indirect-Gap Photoluminescence.

P. McIntyre, J. McVittie, J. Harris, 2016, Nano letters.

Direct Measurement of Surface Charging during Plasma Etching

J. McVittie, S. Murakawa, J. Mcvittie, 1994 .

Charging damage to gate oxides in an O2 magnetron plasma

J. McVittie, S. Fang, J. Mcvittie, 1992 .

A model and experiments for thin oxide damage from wafer charging in magnetron plasmas

J. McVittie, S. Fang, J. Mcvittie, 1992, IEEE Electron Device Letters.

Two-dimensional thermal oxidation of silicon. II. Modeling stress effects in wet oxides

Krishna C. Saraswat, William D. Nix, James P. McVittie, 1988 .

Air-gap formation during IMD deposition to lower interconnect capacitance

K. Saraswat, S. Nag, J. McVittie, 1998, IEEE Electron Device Letters.

Two-dimensional thermal oxidation of silicon—I. Experiments

K. Saraswat, J. McVittie, W. Nix, 1987, IEEE Transactions on Electron Devices.

Ultra-high-yield growth of vertical single-walled carbon nanotubes: Hidden roles of hydrogen and oxygen.

H. Dai, Y. Nishi, J. McVittie, 2005, Proceedings of the National Academy of Sciences of the United States of America.

Technology and reliability constrained future copper interconnects. I. Resistance modeling

P. Kapur, K. Saraswat, J. McVittie, 2002 .

A tuned Langmuir probe for measurements in rf glow discharges

J. McVittie, A. Paranjpe, S. Self, 1990 .

Electrical properties of heavily doped polycrystalline silicon-germanium films

Krishna C. Saraswat, Tsu-Jae King, James P. McVittie, 1994 .

Lateral Nanoconcentrator Nanowire Multijunction Photovoltaic Cells

Y. Nishi, P. Peumans, J. McVittie, 2009 .

A polycrystalline-Si/sub 1-x/Ge/sub x/-gate CMOS technology

K. Saraswat, T. King, J. McVittie, 1990, International Technical Digest on Electron Devices.

Ge-Interface Engineering With Ozone Oxidation for Low Interface-State Density

Y. Oshima, D. Kuzum, Yun Sun, 2008, IEEE Electron Device Letters.

Analytical modeling of silicon etch process in high density plasma

Krishna C. Saraswat, Valeriy Sukharev, Shahram Abdollahi-Alibeik, 1999 .

Horizontal unseeded vapor growth of Iv-Vi compounds and alloys

J. McVittie, T. Harman, J. Mcvittie, 1974 .

Dielectric relaxation study of hydrogen exposure as a source of two-level systems in Al2O3

Betty A. Young, J. Jameson, Y. Nishi, 2011 .

Profile simulation of conformality of chemical vapor deposited copper in subquarter-micron trench and via structures

James F. Loan, E. Eisenbraun, A. Kaloyeros, 1997 .

Robust, stable, and accurate boundary movement for physical etching and deposition simulation

Robert W. Dutton, Edwin C. Kan, Ze-Kai Hsiau, 1997 .

SPEEDIE: a profile simulator for etching and deposition

James P. McVittie, Juan C. Rey, A. J. Bariya, 1991, Other Conferences.

Interface-Engineered Ge (100) and (111), N- and P-FETs with High Mobility

K. Saraswat, Yun Sun, T. Krishnamohan, 2007, 2007 IEEE International Electron Devices Meeting.

A lateral silicon-on-insulator bipolar transistor with a self-aligned base contact

J. Sturm, L. Pfeiffer, J. Gibbons, 1987, IEEE Electron Device Letters.

Two-dimensional silicon oxidation experiments and theory

Dah-Bin Kao, K. Saraswat, W. Nix, 1985, 1985 International Electron Devices Meeting.

NEM relays using 2-dimensional nanomaterials for low energy contacts

H. Wong, Seunghyun Lee, A. Tang, 2013, 2013 Third Berkeley Symposium on Energy Efficient Electronic Systems (E3S).

Radical oxidation of germanium for interface gate dielectric GeO2 formation in metal-insulator-semiconductor gate stack

Krishna C. Saraswat, Piero Pianetta, Masaharu Kobayashi, 2009 .

High performance germanium n-MOSFET with antimony dopant activation beyond 1×1020 cm−3

Y. Nishi, R. Brennan, S.-L. Cheng, 2010, 2010 International Electron Devices Meeting.