J. A. Vechten

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Quantum Dielectric Theory of Electronegativity in Covalent Systems. III. Pressure-Temperature Phase Diagrams, Heats of Mixing, and Distribution Coefficients

J. A. Van Vechten, J. V. Vechten, J. A. Vechten, 1973 .

Simple Theoretical Estimates of the Enthalpy of Antistructure Pair Formation and Virtual‐Enthalpies of Isolated Antisite Defects in Zinc‐Blende and Wurtzite Type Semiconductors

J. V. Vechten, J. A. Vechten, 1975 .

Dielectric Classification of Crystal Structures, Ionization Potentials, and Band Structures

J. C. Phillips, J. V. Vechten, J. A. Vechten, 1969 .

Simple Theoretical Estimates of the Schottky Constants and Virtual‐Enthalpies of Single Vacancy Formation in Zinc‐Blende and Wurtzite Type Semiconductors

J. V. Vechten, J. A. Vechten, 1975 .

Comparison of theory with quenching experiments for the entropy and enthalpy of vacancy formation in Si and Ge

C. D. Thurmond, J. A. Van Vechten, J. V. Vechten, 1976 .

Enthalpy of vacancy migration in Si and Ge

J. V. Vechten, J. A. Vechten, 1974 .

Deviations from the one-defect approximation: antistructure in III-V compounds

J. V. Vechten, J. A. Vechten, 1984 .

Mossbauer spectra and the DX-centre complex in AlGaAs

J. V. Vechten, J. A. Vechten, 1989 .

New Set of Tetrahedral Covalent Radii

J. C. Phillips, J. Phillips, J. V. Vechten, 1970 .

Effect of Disorder on the Conduction-Band Effective Mass, Valence-Band Spin-Orbit Splitting, and the Direct Band Gap in III-V Alloys

O. Berolo, J. Woolley, J. V. Vechten, 1973 .

Electronic Structures of Semiconductor Alloys

T. K. Bergstresser, J. V. Vechten, J. A. Vechten, 1970 .

Franz-Keldysh contributions to third-order optical susceptibilities

David E. Aspnes, J. A. Van Vechten, D. Aspnes, 1969 .

Coincidence of the thermal melting points of crystalline and amorphous Si and coincidence of thresholds for pulsed beam annealing of crystalline and amorphous Si and GaAs

J. V. Vechten, J. A. Vechten, 1982 .

Plasma Annealing and Laser Sputtering; Role of the Frenkel Exciton

J. V. Vechten, J. A. Vechten, 1983 .

Defeating Compensation in Wide Gap Semiconductors by Growing in H that is Removed by Low Temperature De-Ionizing Radiation

J. David Zook, Robert D. Horning, James A. Van Vechten, 1992 .

Consequences of anion vacancy nearest‐neighbor hopping in III‐V compound semiconductors: Drift in InP metal‐insulator‐semiconductor field‐effect transistors

J. Wager, J. V. Vechten, J. A. Vechten, 1985 .

AN ABSTRACT OF THE DISSERTATION OF Tyrus K. Monson for the degree of Doctor of Philosophy in Mechanical Engineering

R. Graupner, J. A. Vechten, T. Monson, 2012 .

Modeling of luminescence phase delay for nondestructive characterization of Si wafers

D. Guidotti, A. Finkel', P. Gerber, 1989 .

I. D. Sawing of Silicon Crystal in Different Lubricant Environments

T. Kuan, K. Shih, W. Westdorp, 1982 .

Reasons to believe pulsed laser annealing of Si does not involve simple thermal melting

R. Tsu, F. Saris, J. V. Vechten, 1979 .

Nonthermal pulsed laser annealing of Si; plasma annealing

Raphael Tsu, J. A. Van Vechten, R. Tsu, 1979 .

17 – Physics of Transient Phenomena during Pulsed Laser Annealing and Sputtering

J. V. Vechten, J. A. Vechten, 1984 .

Comment on ‘‘Phase transformation on and charged particle emission from a Si crystal surface induced by ps laser pulses’’

J. V. Vechten, J. A. Vechten, 1982 .

The Gentle Electronic Nature of Pulsed Beam Annealing, or Does It Really Go Superfluid?

J. A. Vechten, 1981 .

Experimental tests for boson condensation and superconductivity in semiconductors during pulsed beam annealing

J. V. Vechten, J. A. Vechten, 1981 .

Plasma annealing state of semiconductors; plasma condensation to a superconductivity- like state at 1000 K?

A. Compaan, J. V. Vechten, J. A. Vechten, 1981 .

Carrier diffusion in semiconductors subject to large gradients of excited carrier density

M. Wautelet, J. A. Vechten, 1981 .

Variation of semiconductor band gaps with lattice temperature and with carrier temperature when these are not equal

M. Wautelet, J. V. Vechten, J. A. Vechten, 1981 .

Comment on "Threshold for optically induced dislocation glide in GaAs-GaAlAs double heterostructures: Degradation via a new cooperative phenomenon?"

J. .. Basson, J. A. Vechten, 1981 .

Threshold for Optically Induced Dislocation Glide in GaAs-AlGaAs Double Heterostructures: Degradation via a New Cooperative Phenomenon?

M. Small, B. Monemar, J. V. Vechten, 1978 .

Effect of electron-hole pairs on phonon frequencies in Si related to temperature dependence of band gaps

V. Heine, J. V. Vechten, J. A. Vechten, 1976 .

Confine Cu to Increase Cu-Chalcopyrite Solar Cell Voltage

J. V. Vechten, J. A. Vechten, 2006 .

THEORY OF SEMICONDUCTOR PHASE DIAGRAMS WITH APPLICATIONS

J. A. Vechten, 1973 .

A simple man's view of the passivation of semiconductors

J. V. Vechten, J. A. Vechten, 1990 .

Semiconductor–metal phase transformation of tetrahedrally coordinated semiconductors

J. V. Vechten, J. A. Vechten, 1971 .

The temperature dependence of band offsets for semiconductor heterojunctions in general and for the particular cases of AlAs-GaAs and HgTe-CdTe

J. A. Van Vechten, K. Malloy, K J Malloy, 1990 .

Heats of formation of tetrahedrally coordinated semiconductors AMB8-M

J. V. Vechten, J. C. Philiips, J. A. Vechten, 1970 .

A comment on the ``characterization of swirl defects in floating zone Si crystals'' by P.M. Petroff and A.J.R. De Kock

J. W. Matthews, J. V. Vechten, J. A. Vechten, 1976 .

EVIDENCE FOR AND NATURE OF A NONTHERMAL MECHANISM OF PULSED LASER ANNEALING OF Si

J. V. Vechten, J. A. Vechten, 1980 .

Spectroscopic Analysis of Cohesive Energies and Heats of Formation of Tetrahedrally Coordinated Semiconductors

J. C. Phillips, James C. Phillips, J. A. Van Vechten, 1970 .

Origin of CW laser generated high efficiency AlGaAs microstructures

J. A. Vechten, 1983 .

Theoretical aspects of laser annealing

J. V. Vechten, J. A. Vechten, 1983 .

Laser-Solid Interactions: Localization of Momentum and of Energy

J. V. Vechten, J. A. Vechten, 1983 .

Identification of M Centers in InP

J. Wager, J. V. Vechten, J. A. Vechten, 1985 .

Point defects and deep traps in III–V compounds

J. V. Vechten, J. A. Vechten, 1980 .

Divacancy binding enthalpy in semiconductors

J. V. Vechten, J. A. Vechten, 1975 .

Estimation of bond-bending force constants in tetrahedral semiconductors and their variation with pressure obtained from spectroscopic data

J. V. Vechten, J. A. Vechten, 1974 .

Nonstoichiometry and nonradiative recombination in GaP

J. V. Vechten, J. A. Vechten, 1975 .

Nonexistence of localized band tail states in substitutional semiconductor alloys and some other disordered systems

J. V. Vechten, J. A. Vechten, 1972 .

Nonlinear Optical Susceptibilities of Covalent Crystals

J. C. Phillips, J. Phillips, J. V. Vechten, 1969 .

Thermodynamics of Deep Levels in Semiconductor

J. V. Vechten, J. A. Vechten, 1985 .

Atomic model for the EL0 defect in GaAs

J. Wager, J. V. Vechten, J. A. Vechten, 1987 .

Atomic Diffusion With Strain and Injection

J. V. Vechten, J. A. Vechten, 1990 .

Entropy of Atomic Hopping in Diffusion and Defect Transformations

J. Wager, J. V. Vechten, T. Dobson, 1988 .

Effect of interfaces upon atomic diffusion: Si and Zn in GaAs

J. V. Vechten, J. A. Vechten, 1984 .

Intermixing of an AlAs‐GaAs superlattice by Zn diffusion

J. V. Vechten, J. A. Vechten, 1982 .

Calculation of Local Effective Fields: Optical Spectrum of Diamond

R. Martin, J. V. Vechten, J. A. Vechten, 1972 .

Spin-Orbit Splitting in Compositionally Disordered Semiconductors

O. Berolo, J. Woolley, J. V. Vechten, 1972 .

Entropy of ionization and temperature variation of ionization levels of defects in semiconductors

C. D. Thurmond, J. A. Van Vechten, J. V. Vechten, 1976 .

Charge Redistribution and Piezoelectric Constants

J. C. Phillips, J. V. Vechten, J. A. Vechten, 1969 .

Local-Field Effects on Electroreflectance Line Shapes: the Contact Exciton

R. Martin, D. Aspnes, J. Rowe, 1972 .