C. Jia

发表

High quality GaN epilayers grown on carbon nanotube patterned sapphire substrate by metal–organic vapor phase epitaxy

S. Fan, Yang Wei, Guoyi Zhang, 2012 .

High sensitivity fiber sensor for measurement of Cd2+ concentration in aqueous solution based on reflective Mach-Zehnder interference with temperature calibration.

Xuguang Huang, Zhenrong Pan, Chuanyu Jia, 2019, Optics express.

A novel blue-light excitable Pr3+ doped (Sr,Ba)LaMgTaO6 phosphor for plant growth lighting

Zhennan Zhu, Chuanyu Jia, Xiaojiao Kang, 2022, Journal of Rare Earths.

Fabrication of High-Efficiency InGaN-based Red Light-Emitting Diodes via Trench Defects

Z. Chen, F. Jiao, G. Zhang, 2023, 2307.16267.

Modulating lateral strain in GaN-based epitaxial layers by patterning sapphire substrates with aligned carbon nanotube films

S. Fan, Yang Wei, Guoyi Zhang, 2012, Nano Research.

Performance Improvement of VLC System Using GaN-Based LEDs With Strain Relief Layers

Jianping Wang, Huimin Lu, Tongjun Yu, 2016, IEEE Photonics Technology Letters.

Valence subband coupling effect on polarization of spontaneous emissions from Al-rich AlGaN/AlN quantum wells.

Gen-xiang Chen, Huimin Lu, Tongjun Yu, 2012, Optics express.

Strain effect on polarized optical properties of c ‐plane GaN and m ‐plane GaN

Zhizhong Chen, Z. Qin, Guoyi Zhang, 2009 .

Spontaneous luminescence polarizations of wurtzite InGaN/GaN quantum wells

Zhizhong Chen, Xiaodong Hu, Z. Qin, 2008 .

Polarization modification in InGaN/GaN multiple quantum wells by symmetrical thin low temperature-GaN layers

X. Kang, Shengli Qi, Y. Tao, 2010 .

Improvement of electrostatic discharge characteristics of InGaN/GaN MQWs light-emitting diodes by inserting an n+-InGaN electron injection layer and a p-InGaN/GaN hole injection layer

Y. Tong, Guoyi Zhang, Chuanyu Jia, 2012 .

Performance improvement of GaN-based near-UV LEDs with InGaN/AlGaN superlattices strain relief layer and AlGaN barrier

Tongjun Yu, Guoyi Zhang, Chuanyu Jia, 2016 .

Performance improvement of InGaN LEDs by using strain compensated last quantum barrier and electron blocking layer

Zhizhong Chen, Chenguang He, Qi Wang, 2021, Optik.

Low-Defect-Density Aluminum Nitride (AlN) Thin Films Realized by Zigzag Macrostep-Induced Dislocation Redirection

Junze Li, Chuanyu Jia, Kang Zhang, 2021 .

Multifunctional Pr3+ single doped CaLaMgTaO6: Crystal structure, thermal behavior and applications

Yanfei Zhao, Quwei Ni, W. Lü, 2021 .

Performance improvement of GaN-based LEDs with step stage InGaN/GaN strain relief layers in GaN-based blue LEDs.

Yongjian Sun, Guoyi Zhang, Huimin Lu, 2013, Optics express.

Synthesis of GaN Crystals by Nitrogen Pressure-Controlled Recrystallization Technique in Na Alloy Melt

Zhenrong Li, Hongcheng Wang, Chuanyu Jia, 2021, Crystals.

Analyses of surface temperatures on patterned sapphire substrate for the growth of GaN with metal organic chemical vapor deposition

Guoyi Zhang, Zhizhong Chen, Tongjun Yu, 2011 .

Morvan Syndrome and Diffuse Large B-Cell Lymphoma in the Central Nervous System

Chuanyu Jia, Chao Jiang, Jing Zhang, 2020, The neurologist.

Structural, tunable emission and energy transfer of Ca9In(PO4)7:Ce3+,Tb3+/Dy3+ phosphors

Hongcheng Wang, W. Lü, Chuanyu Jia, 2020 .

Generating green and yellow lines in Y6Si3O9N4:Ce3+,Tb3+/Dy3+ oxynitrides phosphor

Hongcheng Wang, W. Lü, Chuanyu Jia, 2019, Journal of Luminescence.

Photoemission study of chemisorption and Fermi-level pinning at K/GaAs(100) interface with synchrotron radiation

C. Hsu, E. Lu, Chuanyu Jia, 2005 .