Kuei-Shu Chang-Liao

发表

Performance and reliability improvement of flash device by a novel programming method

Chia-Huai Ho, Kuei-Shu Chang-Liao, Ya-Nan Huang, 2007, Microelectron. Reliab..

Improved reliability of large-sized a-Si thin-film-transistor by back channel treatment in H2

Kuei-Shu Chang-Liao, Hao-Chieh Lee, Yan-Lin Li, 2015, Microelectron. Reliab..

(Invited) Improved Operation Characteristics in Charge-Trapping Flash Memory Devices with Engineered Dielectric Stack and SiGe Channel

Kuei-Shu Chang-Liao, Zong-Hao Ye, Li-Jung Liu, 2013 .

Gate leakage current suppression and reliability improvement for ultra-low EOT Ge MOS devices by suitable HfAlO/HfON thickness and sintering temperature

Kuei-Shu Chang-Liao, Yan-Lin Li, Wei-Fong Chi, 2015, Microelectron. Reliab..

Employing vertical dielectric layers to improve the operation performance of flash memory devices

Chia-Huai Ho, Kuei-Shu Chang-Liao, Tien-Ko Wang, 2009, Microelectron. Reliab..

NovelSONOS-Type Nonvolatile MemoryDevice withSuitable BandOffset in HfAlOCharge-Trapping Layer

Kuei-Shu Chang-Liao, Tien-Ko Wang, Ping-Hung Tsai, 2007 .

A novel erase method for scaled NAND flash memory device

Chen-Hao Huang, Kuei-Shu Chang-Liao, Hann-Ping Hwang, 2015, VLSI-TSA 2015.

Tunneling component suppression in charge pumping measurement and reliability study for high-k gated MOSFETs

Kuei-Shu Chang-Liao, Tien-Ko Wang, Shih-Cheng Chang, 2011, Microelectron. Reliab..

Improved reliability characteristics of Ge MOS devices by capping Hf or Zr on interfacial layer

Kuei-Shu Chang-Liao, Yan-Lin Li, Shih-Han Yi, 2017, Microelectron. Reliab..

Advance in next century nano CMOSFET research and its future prospect for industry

Kuei-Shu Chang-Liao, C. C. Wang, Albert Chin, 2006 .

SiO2 tunneling and Si3N4/HfO2 trapping layers formed with low temperature processes on gate-all-around junctionless charge-trapping flash memory devices

Jia-Min Shieh, Kuei-Shu Chang-Liao, Chia-Hsin Cheng, 2018, Microelectron. Reliab..

Lessons Learned of NSPO’s Picosatellite Mission: Yamsat - 1A, 1B & 1C

Chen-Joe Fong, Chi-Hung Hwang, Kuei-Shu Chang-Liao, 2002 .

A novel erase method for scaled NAND flash memory device

Kuei-Shu Chang-Liao, Cheng-Jung Yu, Chan-Ching Lin, 2015, 2016 5th International Symposium on Next-Generation Electronics (ISNE).

Depth Profiling of Border Traps in MOSFET With High-$kappa$Gate Dielectric by Charge-Pumping Technique

Kuei-Shu Chang-Liao, Ping-Hung Tsai, Tien-Ko Wang, 2006, IEEE Electron Device Letters.

Record-high 121/62 μA/μm on-currents 3D stacked epi-like Si FETs with and without metal back gate

Jia-Min Shieh, Kuei-Shu Chang-Liao, Ci-Ling Pan, 2013, 2013 IEEE International Electron Devices Meeting.

Enhanced Performance of Single Poly-Silicon EEPROM Cell With a Tungsten Finger Coupling Structure by Full CMOS Process

Kuei-Shu Chang-Liao, Chih-Ping Chung, Chun-Yuan Chen, 2014, IEEE Transactions on Electron Devices.

Detection of Border Trap Density and Energy Distribution Along the Gate Dielectric Bulk of High-$\kappa$ Gated MOS Devices

Kuei-Shu Chang-Liao, Ping-Hung Tsai, Tien-Ko Wang, 2007, IEEE Electron Device Letters.

Electric property improvement and boron penetration suppression in metal–oxide–Si capacitors by amorphous-Si gate electrode and two-step nitridation

Kuei-Shu Chang-Liao, Jung Hsiang Lee, Wu-Shiung Feng, 2001 .

Electrical characteristics of CNFETs with asymmetric gating structures

Kuei-Shu Chang-Liao, Keh-Chyang Leou, Chuen-Horng Tsai, 2008 .

Electrical conduction and TDDB reliability characterization for low-k SiCO dielectric in Cu interconnects

Kuei-Shu Chang-Liao, Kenneth Wu, Tien-Ko Wang, 2008 .

Study of gate oxide traps in HfO2/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors by use of ac transconductance method

Kuei-Shu Chang-Liao, Tomas Palacios, Omair I. Saadat, 2013 .

Improved electrical characteristics high-k gated MOS devices with in-situ remote plasma treatment in atomic layer deposition

Kuei-Shu Chang-Liao, Tien-Ko Wang, Chun-Chang Lu, 2013 .

Effects of interstitial oxygen defects at HfO/sub x/N/sub y//Si interface on electrical characteristics of MOS devices

Kuei-Shu Chang-Liao, Tien-Ko Wang, Chin-Lung Cheng, 2006 .

Improvement of oxynitride reliability by two-step N2O nitridation

Kuei-Shu Chang-Liao, Jang-Ming Ku, 1999 .

Improved Electrical Characteristics of Ge MOS Devices With High Oxidation State in ${\rm HfGeO}_{\rm x}$ Interfacial Layer Formed by In Situ Desorption

Kuei-Shu Chang-Liao, Tien-Ko Wang, Chun-Chang Lu, 2014, IEEE Electron Device Letters.

Correlation between mechanical and electrical properties for assessing the degradation of ethylene propylene rubber cables used in nuclear power plants

Kuei-Shu Chang-Liao, K. Chang-Liao, Y. T. Hsu, 2007 .

Effects of oxygen content and capping metal layer on bipolar switching properties of HfO2-based resistive random access memory devices

Kuei-Shu Chang-Liao, Tien-Ko Wang, Chung-Hao Fu, 2011, 2011 International Semiconductor Device Research Symposium (ISDRS).

Comparison of positive and negative bias-temperature instability on MOSFETs with HfO2/LaOx and HfO2/AlOx dielectric stacks

Kuei-Shu Chang-Liao, Tien-Ko Wang, Chun-Chang Lu, 2010 .

Reduction and non-uniformity of high density plasma process induced electrical degradation in MOS devices

Kuei-Shu Chang-Liao, Pei-Jer Tzeng, Chun-Chen Yeh, 1999, 1999 4th International Symposium on Plasma Process-Induced Damage (IEEE Cat. No.99TH8395).