A. Smolanka

发表

Noise characteristics of nanoscaled SOI MOSFETs

Cor Claeys, Eddy Simoen, N. Lukyanchikova, 2013, Other Conferences.

Impact of the back-gate bias on the low-frequency noise of partially depleted silicon-on-insulator MOSFETs

Cor Claeys, Eddy Simoen, Abdelkarim Mercha, 2004, SPIE International Symposium on Fluctuations and Noise.

Influence of an accumulation back-gate voltage on the low-frequency noise spectra of 0.13 /spl mu/m fully-depleted SOI MOSFETs fabricated on ELTRAN and UNIBOND wafers

E. Simoen, C. Claeys, A. Smolanka, 2004, Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850).

Drain currents and their excess noise in triple gate bulk p-channel FinFETs of different geometry

Cor Claeys, Eddy Simoen, N. Lukyanchikova, 2013, Microelectron. Reliab..

'The base current and related 1/f noise for SiGe HBTs realized by SEG/NSEG technology on SOI and bulk substrates'

Steve Hall, Octavian Buiu, Peter Ashburn, 2006 .

Low‐Frequency Noise in SOI SiGe HBTs Made by Selective Growth of the Si Collector and Non‐Selective Growth of SiGe Base

Steve Hall, Octavian Buiu, Peter Ashburn, 2005 .

High-energy proton irradiation induced changes in the linear-kink noise overshoot of 0.10 μm partially depleted silicon-on-insulator metal-oxide-semiconductor field-effect transistors

Eddy Simoen, Abdelkarim Mercha, Joan Marc Rafí, 2004 .

Analytical Model for the Impact of the Twin Gate on the Floating-Body-Related Low-Frequency Noise Overshoot in Silicon-on-Insulator MOSFETs

E. Simoen, C. Claeys, N. Lukyanchikova, 2006, IEEE Transactions on Electron Devices.

Linear-kink-noise suppression in partially depleted SOI using the twin-gate MOSFET configuration

E. Simoen, C. Claeys, N. Lukyanchikova, 2005, IEEE Electron Device Letters.

Electron valence-band tunnelling excess noise in twin-gate silicon-on-insulator MOSFETs

Eddy Simoen, Joao Antonio Martino, N. Lukyanchikova, 2006 .

Origin of the front-back-gate coupling in partially depleted and fully depleted silicon-on-insulator metal-oxide-semiconductor field-effect transistors with accumulated back gate

Eddy Simoen, N. Lukyanchikova, A. Smolanka, 2005 .

1/f noise and generation/recombination noise in SiGe HBTs on SOI

P. Ashburn, O. Buiu, N. Lukyanchikova, 2005, IEEE Transactions on Electron Devices.

Excess Lorentzian noise in partially depleted SOI nMOSFETs induced by an accumulation back-gate bias

E. Simoen, C. Claeys, N. Lukyanchikova, 2004, IEEE Electron Device Letters.

Back-Gate Induced Noise Overshoot in Partially-Depleted SOI MOSFETs

Cor Claeys, Eddy Simoen, N. Lukyanchikova, 2005 .

Short-channel effects in the Lorentzian noise induced by the EVB tunneling in partially-depleted SOI MOSFETs

Eddy Simoen, Abdelkarim Mercha, N. Lukyanchikova, 2004 .

Behavior of the 1/f noise and electron mobility in 65 nm FD SOI nMOSFETs employing different tensile‐strain‐inducing techniques

Eddy Simoen, C. Claeys, N. Lukyanchikova, 2007 .