Likun Shen

发表

GaN-Based RF Power Devices and Amplifiers

Umesh K. Mishra, Likun Shen, Thomas E. Kazior, 2008, Proceedings of the IEEE.

Low nonalloyed Ohmic contact resistance to nitride high electron mobility transistors using N-face growth

James S. Speck, Umesh K. Mishra, Tomas Palacios, 2007 .

SELECTIVE DRY ETCHING OF GaN OVER AlGaN IN BCL3/SF6 MIXTURES

H. Xing, T. Palacios, L. McCarthy, 2004 .

Correlation Between DC–RF Dispersion and Gate Leakage in Deeply Recessed GaN/AlGaN/GaN HEMTs

S. Denbaars, N. Fichtenbaum, U. Mishra, 2008, IEEE Electron Device Letters.

600 V JEDEC-qualified highly reliable GaN HEMTs on Si substrates

Primit Parikh, Toshihide Kikkawa, Kenji Imanishi, 2014, 2014 IEEE International Electron Devices Meeting.

Study of the n+ GaN Cap in AlGaN/GaN High Electron Mobility Transistors with Reduced Source–Drain Resistance

S. Denbaars, T. Palacios, N. Fichtenbaum, 2007 .

Origin of etch delay time in Cl2 dry etching of AlGaN/GaN structures

Umesh K. Mishra, Alessandro Chini, Tomas Palacios, 2003 .

Gallium nitride based transistors

Daniel S. Green, Umesh K. Mishra, S. P. DenBaars, 2001 .

V-Gate GaN HEMTs for X-Band Power Applications

Rongming Chu, Likun Shen, S. Keller, 2008, IEEE Electron Device Letters.

Unpassivated p-GaN/AlGaN/GaN HEMTs with 7.1 W/mm at 10 GHz

Umesh K. Mishra, Giacinta Parish, Alessandro Chini, 2003 .

AlGaN/AlN/GaN high-power microwave HEMT

R. Coffie, S. Keller, D. Buttari, 2001, IEEE Electron Device Letters.

AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors using barium strontium titanate

James S. Speck, Robert A. York, Umesh K. Mishra, 2004 .

GaN-Based RF Power Devices and Amplifiers Gallium nitride power transistors can operate at millimeter wave and beyond to meet future needs of cell phones, satellites, and TV broadcasting.

Umesh K. Mishra, Likun Shen, Yifeng Wu, 2008 .

Indium surfactant assisted growth of AlN/GaN heterostructures by metal-organic chemical vapor deposition

S. Denbaars, S. Keller, U. Mishra, 2001 .

Indium-surfactant-assisted growth of high-mobility AlN/GaN multilayer structures by metalorganic chemical vapor deposition

S. Denbaars, S. Keller, U. Mishra, 2001 .