Y. J. Park

发表

Selective etching technology of in-situ P doped poly-Si (SEDOP) for high density DRAM capacitors

S. H. Woo, C. Lim, W. G. Lee, 1994, Proceedings of 1994 VLSI Technology Symposium.

A new charge pump without degradation in threshold voltage due to body effect [memory applications]

Y. J. Park, Jongshin Shin, I. Chung, 2000, IEEE Journal of Solid-State Circuits.

A new hole mobility model for hydrodynamic simulation

Y. J. Park, H. Min, Hyungsoon Shin, 2000 .

A three-dimensional simulation of quantum transport in silicon nanowire transistor in the presence of electron-phonon interactions

Y. J. Park, H. Min, Seonghoon Jin, 2006 .

A BJT-Based Heterostructure 1T-DRAM for Low-Voltage Operation

Y. J. Park, I. Chung, K. Shim, 2012, IEEE Electron Device Letters.

An isotropic two band model for hot electron transport in silicon: Including electron emission probability into SiO2

Y. J. Park, R. Dutton, H. Min, 1995 .

Electron mobility behavior in extremely thin SOI MOSFET's

Y. J. Park, H. Min, J. H. Choi, 1995 .

Analysis of the spurious negative resistance of PN junction avalanche breakdown

Y. J. Park, H. Min, Sung-Joon Hong, 1999 .

Extension of the DG Model to the Second-Order Quantum Correction for Analysis of the Single-Charge Effect in Sub-10-nm MOS Devices

Y. J. Park, Seongwook Choi, Byung-Gook Park, 2020, IEEE Journal of the Electron Devices Society.

Simulation of Quantum Effects in the Nano-scale Semiconductor Device

Y. J. Park, H. Min, Seonghoon Jin, 2004 .

Influence of Electron-Phonon Interactions on the Electronic Transport in Nanowire Transistors

Y. J. Park, H. Min, Seonghoon Jin, 2006, 2006 International Conference on Simulation of Semiconductor Processes and Devices.

Near-Infrared Detection Using Pulsed Tunneling Junction in Silicon Devices

Y. J. Park, Myoung Jin Lee, Seongwook Choi, 2016, IEEE Transactions on Electron Devices.

Threshold Voltage Fluctuation by Random Telegraph Noise in Floating Gate nand Flash Memory String

Hyungcheol Shin, Byung-Gook Park, Young June Park, 2011, IEEE Transactions on Electron Devices.

A New Statistical Model for SILC Distribution of Flash Memory and the Effect of Spatial Trap Distribution

Hong Shick Min, Young June Park, Seonghoon Jin, 2006, 2006 International Conference on Simulation of Semiconductor Processes and Devices.

An anomalous device degradation of SOI narrow width devices caused by STI edge influence

Hong Shick Min, Young June Park, Jong-Ho Lee, 2002 .

Modeling of thermal noise in short-channel MOSFETs at saturation

Young June Park, Y. J. Park, C. Park, 2000 .

Comparison of Low-Frequency Noise in Channel and Gate-Induced Drain Leakage Currents of High-$k$ nFETs

Y. J. Park, Byung-Gook Park, Jong-Ho Lee, 2010, IEEE Electron Device Letters.

An Analytical Model for the Threshold Voltage of Intrinsic Channel MOSFET Having Bulk Trap Charges

Y. J. Park, Seongwook Choi, Sungman Rhee, 2017, IEEE Transactions on Electron Devices.

New Conversion Method from Response Spectrum to PSD Functions

Y. J. Park, 1995 .

FN-tunneling-current Modeling in a Recessed-channel Structure

Y. J. Park, Myoung Jin Lee, Young Kwon Kim, 2017 .

Electrical instabilities and low-frequency noise in InGaZnO thin film transistors

Y. J. Park, Byung-Gook Park, Jong-Ho Lee, 2010, 2010 17th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits.

Drain current enhancement due to velocity overshoot effects and its analytic modeling

Young June Park, Y. J. Park, H. Min, 1996 .

100-nm n-/p-channel I-MOS using a novel self-aligned structure

Byung-Gook Park, Young June Park, Jong Duk Lee, 2005 .

Effect of body structure on analog performance of SOI NMOSFET's

Y. J. Park, H. Shin, Y. Park, 1998, 1998 IEEE International SOI Conference Proceedings (Cat No.98CH36199).

Partially depleted SOI NMOSFET's with self-aligned polysilicon gate formed on the recessed channel region

Y. J. Park, Hyungcheol Shin, Choon-Bae Park, 1997 .

Gate recessed (GR) MOSFET with selectively halo-doped channel and deep graded source/drain for deep submicron CMOS

Young June Park, Jong Duk Lee, Woo-Hyeong Lee, 1993, Proceedings of IEEE International Electron Devices Meeting.

Theory of thermal noise in long-channel MOS transistors operating before saturation

Young June Park, Duheon Song, Junil Lee, 1997 .

Investigation of noise in silicon nanowire transistors through quantum simulations

Y. J. Park, H. Min, Hong-hyun Park, 2008, 2008 International Conference on Simulation of Semiconductor Processes and Devices.

Low-frequency noise degradation caused by STI interface effects in SOI-MOSFETs

Hong Shick Min, Young June Park, Jong-Ho Lee, 2001 .

An anomalous device degradation of SOI devices with STI

Y. J. Park, Jong-Ho Lee, H. Min, 2000, 2000 IEEE International SOI Conference. Proceedings (Cat. No.00CH37125).

Physical modeling of time dependent dielectric breakdown (TDDB) of BEOL oxide using Monte Carlo particle simulation

Y. J. Park, Seongwook Choi, Y. Park, 2014, 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

An Improved 3 D Monte Carlo Simulation of Reaction Diffusion Model for Accurate Prediction on the NBTI Stress / Relaxation

Y. J. Park, Seongwook Choi, C. Baek, 2013 .