Xiaoming Wu

发表

Detailed surface analysis of V-defects in GaN films on patterned silicon(111) substrates by metal–organic chemical vapour deposition. Corrigendum

F. Jiang, Jianli Zhang, Shuan Pan, 2019, Journal of Applied Crystallography.

Efficient emission of InGaN-based light-emitting diodes: toward orange and red

Shenmin Zhang, Meng Zhang, F. Jiang, 2020 .

Status of GaN-based green light-emitting diodes

Wenqing Fang, F. Jiang, Guangxu Wang, 2015 .

Effect of hole blocking layer on V-pit hole injection and internal quantum efficiency in GaN-based yellow LED

Fe-Guo Deng, Jianli Zhang, Z. Quan, 2020 .

Effects of V-pits covering layer position on the optoelectronic performance of InGaN green LEDs

Xingan Jiang, F. Jiang, Junlin Liu, 2019, Journal of Semiconductors.

Realization of Highly Efficient InGaN Green LEDs with Sandwich-like Multiple Quantum Well Structure: Role of Enhanced Interwell Carrier Transport

F. Jiang, Jianli Zhang, Junlin Liu, 2018, ACS Photonics.

Effects of p-AlGaN EBL thickness on the performance of InGaN green LEDs with large V-pits

Zhijue Quan, Fengyi Jiang, Junlin Liu, 2016 .

Effects of Hydrogen Treatment in Barrier on the Electroluminescence of Green InGaN/GaN Single-Quantum-Well Light-Emitting Diodes with V-Shaped Pits Grown on Si Substrates

F. Jiang, Guangxu Wang, Jianli Zhang, 2018, Chinese Physics Letters.

The effect of silicon doping in the barrier on the electroluminescence of InGaN/GaN multiple quantum well light emitting diodes

F. Jiang, Qinghua Mao, Jianli Zhang, 2013 .

Effects of thickness ratio of InGaN to GaN in superlattice strain relief layer on the optoelectrical properties of InGaN-based green LEDs grown on Si substrates

F. Fang, F. Jiang, Guangxu Wang, 2017 .