W. Robl

W/WN/poly gate implementation for sub-130 nm vertical cell DRAM

M. Naeem, A. Strong, G. Bronner, 2001, 2001 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.01 CH37184).

Stress, Sheet Resistance, and Microstructure Evolution of Electroplated Cu Films During Self-Annealing

H. Ceric, T. Detzel, Rui Huang, 2010, IEEE Transactions on Device and Materials Reliability.

A reliable technology concept for active power cycling to extreme temperatures

Stefan Decker, Markus Ladurner, Robert Illing, 2011, Microelectron. Reliab..

High cycle fatigue testing of thermosonic ball bonds

Golta Khatibi, Michael Nelhiebel, M. Lederer, 2017, Microelectron. Reliab..

Effective and reliable heat management for power devices exposed to cyclic short overload pulses

Stefan Decker, Markus Ladurner, Robert Illing, 2013, Microelectron. Reliab..

High performance single work-function tungsten gate CMOS devices for gigabit DRAM

W. Bergner, Boyong He, C. Parks, 2001, International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).

Copper Metallization for Power Devices

M. Stecher, W. Robl, R. Hofmann, 2007, 2007 IEEE/SEMI Advanced Semiconductor Manufacturing Conference.

A highly manufacturable 110 nm DRAM technology with 8F/sup 2/ vertical transistor cell for 1Gb and beyond

W. Mueller, K. Varn, R. Jammy, 2002, 2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303).