M. Wu

发表

Low-frequency noise measurements of electrical stress in InAlN/GaN and AlGaN/GaN heterostructure field-effect transistors

Hadis Morkoç, Ümit Özgür, Xing Li, 2011, OPTO.

Effect of substrate offcut on AlGaN/GaN HFET structures on bulk GaN substrates

Hadis Morkoç, Xianfeng Ni, Ümit Özgür, 2011, OPTO.

The Design of Electrode of Coal Roadway Advanced Detector

J. T. Zhang, M. Wu, Y. Zhou, 2015 .

Measurements of gate lag in high-quality nearly lattice matched InAlN/AlN/GaN HFET structures

Hadis Morkoç, Xianfeng Ni, Xiang Li, 2010, OPTO.

Heterostructure designs for enhanced performance and reliability in GaN HFETs: camelback channels

Hadis Morkoç, Jacob H. Leach, Arvydas Matulionis, 2011, OPTO.

Degradation analysis of InAlN/AlN/GaN heterostructure field-effect transistors using low-frequency noise and current-transient methods: hot-phonon effects

Hadis Morkoç, Ümit Özgür, Xiang Li, 2012, OPTO.

Ferroelectric field effect transistor with a double-gate structure on AlGaN/GaN heterostructures

Hadis Morkoç, Vitaliy Avrutin, Bo Xiao, 2009, OPTO.

Non-polar m-plane GaN on patterned Si(112) substrates by metalorganic chemical vapor deposition

Hadis Morkoç, Xianfeng Ni, Xiang Li, 2010, OPTO.

Optical properties of nonpolar (1-100) and semipolar (1-101)GaN grown by MOCVD on Si patterned substrates

Sebastian Metzner, Hadis Morkoç, Lin Zhou, 2011, OPTO.

Transient current spectroscopy of lattice matched InAlN/AlN/GaN HFETs for identification of traps resulting in gate lag

Hadis Morkoç, Ümit Özgür, J. Xie, 2009, OPTO.

AlxIn1-xN/GaN heterostructure field effect transistors

Hadis Morkoç, Xianfeng Ni, Jacob H. Leach, 2008, SPIE OPTO.

Internal quantum efficiency of m-plane InGaN on Si and GaN

Hadis Morkoç, Xianfeng Ni, Ryoko Shimada, 2010, OPTO.